Liquid phase epitaxial growth of II–V semiconductor compound Zn₃As₂

Abstract

We report the liquid phase epitaxial growth of Zn3As2 on InAs (1 1 0) substrates using 100% In solvent. The zinc concentration in the layers was varied by changing the zinc mole fraction in the growth melt from 3 × 10−3 to 15 × 10−3, keeping all other growth parameters constant. Layers grown with 3 × 10−3, 5 × 10−3 and 8 × 10−3 mole fractions of zinc seem to be polycrystalline, while layers grown with more than 8 × 10−3 mole fraction of zinc resulted in highly oriented and single crystalline material. Composition of the epilayers was confirmed by energy dispersive x-ray microanalysis. Scanning electron microscopy was used to determine the thickness of the epilayers and the growth rate was calculated. Furthermore it was found that a linear dependence exists between the growth rate and the zinc mole fraction in the growth melt. Atomic force microscopy results reveal that the smoothness of the epilayers improve when the zinc concentration in the epilayer approaches the stoichiometric value of Zn3 As2. Room temperature Hall measurements showed that the grown epilayers were unintentionally doped p-type with an increase in the carrier mobility and a decrease in the carrier concentration with respect to the increase in the zinc mole fraction in the growth melt.

Nanosails Showcasing Zn3As2 as an Optoelectronic‐Grade Earth Abundant Semiconductor

“…One should note here however that using InP and GaAs defies the purpose of achieving a sustainable technology with earth‐abundant elements. Epitaxial thin films of Zn 3 As 2 have been obtained by metal‐organic vapor phase epitaxy, molecular beam epitaxy, and liquid phase epitaxy . In all these reports, misfit dislocations and cracks at the interface of thin films seem to be unavoidable .…”

Liquid phase epitaxial growth of Zn3As2 and the effect of 100MeV Ni9+ ion irradiation

“…Smooth and mirror-finish layers have been obtained at 525.5 1C with a cooling rate of 0.2 1C/min, and the growth details were described elsewhere [6]. The grown layers were subjected to 100 MeV Ni 9+ ion irradiation with the fluences of 1 Â10 10 , 1 Â10 11 , 1 Â10 12 and 1 Â10 13 ions/cm 2 using 15 UD tandem pelletron accelerator at the Inter-University accelerator centre (IUAC), New Delhi [7].…”

First‐principles study of optical and thermoelectric properties of Zn3As2 and ZnSb

“…Zn 3 As 2 1.01 1.32 [11] 1 [17] , 0.99 [18] ZnSb 0.65 0.72 [19] , 0.60 [20] , 0.56 [6] 0.53 [7] , 0.50 [21] TA B L E 2 Calculated static refractive index and birefringence. 50 × 50.…”