Optical properties and scanning probe microscopy study of some AgAsSSe amorphous films

Knotek, Petr; Tasseva, J.; Petkov, K.; Kincl, M.; Tichý, L.

doi:10.1016/j.tsf.2009.04.038

Cited by 11 publications

(11 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A similar value of the band gap for the lm of the glass As 40 S 30 Se 30 was also reported by some other authors (2.01 eV) [6,7] and (2.08 eV) [8]. The same trend of the change in the value of E g with silver doping was also found in some other systems such as AgAsSe [9], AgAsS [10] and AgAsSSe [1,11].…”

Section: Resultssupporting

confidence: 88%

Absorption Edge and Optical Band Gap of Ag-As₄₀S₃₀Se₃₀Amorphous Samples

2015

View full text Add to dashboard Cite

The paper describes the results of a study of the inuence of silver content on the absorption edge and optical band gap of the newly synthesized glasses of the Agx(As40S30Se30)100−x type for x = 0, 0.5, 1, 2, 3, 5 at.% and of the corresponding lms. The synthesis of bulk samples was performed in a rocking furnace from high-purity elemental components by a melt quenching method. Films were prepared from the synthesized bulk samples by pulsed laser deposition. Transmission spectra of the investigated samples were recorded at room temperature. The absorption edge and the optical band gap were determined by extrapolating the linear parts of the absorption spectra. It was found that the investigated range of Ag doping concentrations has a great inuence on the absorption edge and optical band gap. Namely, with the increase of the silver content in the material the optical band gap showed a decrease. For lms, it decreased from 2.02 eV, for the glass without silver, to 1.805 eV for the composition with 5 at.% Ag, whereas for the analogous bulk samples this decrease was from 1.84 eV to 1.609 eV.

show abstract

Section: Resultssupporting

confidence: 88%

Absorption Edge and Optical Band Gap of Ag-As₄₀S₃₀Se₃₀Amorphous Samples

2015

View full text Add to dashboard Cite

show abstract

“…Compositional variation of the refractive index and optical band-gap of chalcogenide glass thin films. The data depicted is taken from own studies and published elsewhere (Todorov et al, 2001(Todorov et al, , 2003Tasseva et al, 2005Tasseva et al, , 2007Tasseva et al, , 2010Kincl et al, 2009;Knotek et al, 2009;Petkov et al , 2009). …”

mentioning

confidence: 99%

Thin Chalcogenide Films for Photonic Applications

Todorov¹,

Tasseva²,

Babeva³

2012

Photonic Crystals - Innovative Systems, Lasers and Waveguides

View full text Add to dashboard Cite

“…The results are in a good agreement with the KPFM contrast of nanodiamonds on a Si substrate, where the contrast even changed for the lower lift height (see Figure 10.2 in [41]). The atypical conductive TiN coating of the tip (instead of Pt, Au Pt/Ir or Pt/Cr tips [33,41–43]) was used because of the higher mechanical stability of the tips and in order to eliminate diffusion and other chemical interactions of the tip coating with the samples. The measured difference of the surface contact potential (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The topography, phase shift image, Kelvin probe force microscopy and I – V characteristics were measured by the AFM SolverPro M, Nt-MDT (Russia) with a resolution of 512 × 512 pixels. The HA_NC tips (resonant frequency 140 kHz, force constant 3.5 N/m) were used for measuring the metal layer thickness by the scratch method and phase contrast [30,32], while conductive NSG01/TiN tips (150 kHz, 5.1 N/m) were used for Kelvin probe force measurements and contact CSG-10/Pt tips (22 kHz, 0.11 N/m) for recording I – V characteristics [33–34] for 10 replicas from an identical point without delay; see the corresponding references above for other experimental details. The set-point was stabilized in the range of 40–50% and the scanning frequency of 0.5 Hz was used, if not mentioned otherwise.…”

Section: Methodsmentioning

confidence: 99%

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

Knotek

Plechäček

Smolík

et al. 2019

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

This study deals with the preparation and characterization of metallic nanoinclusions on the surface of semiconducting Bi2Se3 that could be used for an enhancement of the efficiency of thermoelectric materials. We used Au forming a 1D alloy through diffusion (point nanoinclusion) and Mo forming thermodynamically stable layered MoSe2 nanosheets through the reaction with the Bi2Se3. The Schottky barrier formed by the 1D and 2D nanoinclusions was characterized by means of atomic force microscopy (AFM). We used Kelvin probe force microscopy (KPFM) in ambient atmosphere at the nanoscale and compared the results to those of ultraviolet photoelectron spectroscopy (UPS) in UHV at the macroscale. The existence of the Schottky barrier was demonstrated at +120 meV for the Mo layer and −80 meV for the Au layer reflecting the formation of MoSe2 and Au/Bi2Se3 alloy, respectively. The results of both methods (KPFM and UPS) were in good agreement. We revealed that long-time exposure (tens of seconds) to the electrical field leads to deep oxidation and the formation of perturbations greater than 1 µm in height, which hinder the I–V measurements.

show abstract

Optical properties and scanning probe microscopy study of some AgAsSSe amorphous films

Cited by 11 publications

References 24 publications

Absorption Edge and Optical Band Gap of Ag-As₄₀S₃₀Se₃₀Amorphous Samples

Absorption Edge and Optical Band Gap of Ag-As₄₀S₃₀Se₃₀Amorphous Samples

Thin Chalcogenide Films for Photonic Applications

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

Contact Info

Product

Resources

About

Optical properties and scanning probe microscopy study of some AgAsSSe amorphous films

Cited by 11 publications

References 24 publications

Absorption Edge and Optical Band Gap of Ag-As40S30Se30Amorphous Samples

Absorption Edge and Optical Band Gap of Ag-As40S30Se30Amorphous Samples

Thin Chalcogenide Films for Photonic Applications

Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere

Contact Info

Product

Resources

About

Absorption Edge and Optical Band Gap of Ag-As₄₀S₃₀Se₃₀Amorphous Samples

Absorption Edge and Optical Band Gap of Ag-As₄₀S₃₀Se₃₀Amorphous Samples