The
optoelectronic properties of organic thin films are strongly
dependent on their molecular orientation and packing, which in turn
is sensitive to the underlying substrate. Hexagonal boron nitride
(hBN) and other van der Waals (vdW) materials are known to template
different organic thin film growth modalities from conventional inorganic
substrates such as SiO2. Here, the morphology and temperature-dependent
optical properties of pentacene films grown on hBN are reported. Pentacene
deposited on hBN forms large-grain films with a molecular π-face-on
orientation unlike the dendritic edge-on thin-film phase on SiO2. Pentacene/hBN films exhibit a 40 meV lower free exciton
emission than pentacene/SiO2 and an unconventional emission
energy temperature dependence. Time-resolved photoluminescence (PL)
decay measurements show a long-lived signal in the π-face-on
phase related to delayed emission from triplet–triplet fusion.
This work demonstrates that growth on vdW materials provides a pathway
for controlling optoelectronic functionality in molecular thin films.