Optical phonon damping in the ultrathin-layer GaAs/AlAs superlattices

Dvoynenko, Mykhaylo M.; Goncharenko, Anatoliy V.; Romaniuk, V.R.; Venger, É. F.

doi:10.1006/spmi.1999.0787

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Cited by 5 publications

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“…Therefore, it seems probable that radiative damping is not the dominant mechanism for the phonons observed in the present reflectance spectra. Our results support the conclusion of Dvoynenko et al 12 that the increase in phonon damping is related to interface broadening which becomes more important when the confinement increases. This conclusion is consistent with other observations that the TO phonon linewidth is more sensitive to interface disorder than is the LO phonon linewidth.…”

Section: Samplesupporting

confidence: 92%

“…This conclusion is consistent with other observations that the TO phonon linewidth is more sensitive to interface disorder than is the LO phonon linewidth. 12 In summary, the p-polarized reflectivity spectra of GaAs/AlAs superlattices have been studied using a firstderivative fitting technique. In our data analysis, the thickness and phonon parameters of the confined AlAs layers were determined simultaneously and unambiguously.…”

Section: Samplementioning

confidence: 99%

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