Optical parametric oscillator based on cadmium germanium arsenide

Correlation between dislocation etch pits, carrier concentration and optical absorption in CdGeAs 2 grown by modified Vertical Bridgman method

“…Unfortunately, there is a harmful absorption in the region of 5.5 µm varying not only from one laboratory to another, but also from boule to boule and within each boule (across the boule's radius and along its length) [15], which has further limited its usefulness, such as reducing the SHG efficiency at the doubling wavelength for the 10.6 µm CO 2 laser [10,16] and laser output power of optical parametric oscillator (OPO) [17][18][19]. This absorption is attributed to the intraband transition between the two upper valence bands [20][21][22] and it's suggested that the defects responsible for the shallow acceptor may be associated with germanium on arsenic sites (Ge As ) by electron paramagnetic resonance (EPR) measurements [23].…”

High-power, rapidly-tunable dual-band CdSe optical parametric oscillator

“…Broad and continuous tunability in the long-wave IR has typically been achieved through the use of angle tuned OPOs based on nonlinear optical materials such as CdSe [1][2][3][4][5]. Angle tuning limits the speed at which random wavelengths can be accessed and complicates optomechanical design.…”