Optical orientation of holes and electrons in strained layer InGaAs/GaAs quantum wells

Васильев, А. М.; Daiminger, Franz X.; Straka, J.; Forchel, A.; Кочерешко, В. П.; Sandler, G. L.; Uraltsev, I. N.

doi:10.1006/spmi.1993.1019

Cited by 9 publications

(2 citation statements)

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“…For excitation energy above the threshold of lh states, the polarization decreases rapidly, since electrons with opposite spin directions are produced from the light-hole subband. Large values of P have already been reported for p-doped strained films [126], quantum wells [127], and superlattices [128]. An extremely long electron spin-relaxation time of 20 ns, two orders of magnitude longer than that found for homogeneously doped GaAs for comparable acceptor concentrations, has been found for p-type δ-doped GaAs:Be/AlGaAs double heterostructures and has been attributed to a drastic reduction of the electron-hole wavefunction overlap, which strongly reduces the electron-hole exchange interaction [67].…”

Section: Spin Polarization Of An Optically Pumped Electron Gasmentioning

confidence: 85%

Spin relaxation in low-dimensional systems

Viña

1999

J. Phys.: Condens. Matter

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We review some of the newest findings on the spin dynamics of carriers and excitons in GaAs/GaAlAs quantum wells. In intrinsic wells, where the optical properties are dominated by excitonic effects, we show that exciton-exciton interaction produces a breaking of the spin degeneracy in two-dimensional semiconductors. In doped wells, the two spin components of an optically created two-dimensional electron gas are well described by Fermi-Dirac distributions with a common temperature but different chemical potentials. The rate of the spin depolarization of the electron gas is found to be independent of the mean electron kinetic energy but accelerated by thermal spreading of the carriers.

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Section: Spin Polarization Of An Optically Pumped Electron Gasmentioning

confidence: 85%

Spin relaxation in low-dimensional systems

Viña

1999

J. Phys.: Condens. Matter

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“…6 suggests that a removal of the heavy/light hole degeneracy can substantially increase P n (D'yakonov and Perel', 1984a), up to the limit of complete spin polarization. An increase in P n and P circ in GaAs strained due to a lattice mismatch with a substrate, or due to confinement in quantum well heterostructures, has indeed been demonstrated (Oskotskij et al, 1997;Vasilev et al, 1993), detecting P n greater than 0.9.…”

Section: B Optical Spin Orientationmentioning

confidence: 94%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Extended and Point Defects, Doping, and Magnetism

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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Optical orientation of holes and electrons in strained layer InGaAs/GaAs quantum wells

Cited by 9 publications

References 0 publications

Spin relaxation in low-dimensional systems

Spin relaxation in low-dimensional systems

Spintronics: Fundamentals and applications

Extended and Point Defects, Doping, and Magnetism

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