Optical Nonlinearity in Cu2CdSnS4 and α/β-Cu2ZnSiS4: Diamond-like Semiconductors with High Laser-Damage Thresholds

Rosmus, Kimberly A.; Brant, Jacilynn A.; Wisneski, Stephen D.; Clark, Daniel J.; Kim, Yong Soo; Jang, Joon I.; Brunetta, Carl D.; Zhang, Jian‐Han; Srnec, Matthew N.; Aitken, Jennifer A.

doi:10.1021/ic501310d

Cited by 78 publications

(63 citation statements)

References 39 publications

(23 reference statements)

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“…The whole structure is composed of tetrahedral ligands that align along the c axis. Note that the discovered quaternary DLSs in the I 2 -II-IV-VI 4 systems normally crystallize in the one of following space groups: I-42m (Cu 2 CdSnS 4 ) [76], I-4 (Cu 2 ZnSnS 4 ) [90], Pmn2 1 (Li 2 CdGeS 4 ) [74], Pna2 1 (Li 2 MnGeS 4 ) [75], and Pn (Li 2 CoSnS 4 ) [75], to our best knowledge, which represent the stannite, kesterite, wurtz-stannite, and wurtz-kesterite structural features. …”

Section: Crystal Structurementioning

confidence: 99%

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

Pan

2017

Crystals

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Abstract:A new family of quaternary diamond-like semiconductors (DLSs), Li 2 HgMS 4 (M = Si, Ge, Sn), were successfully discovered for the first time. All of them are isostructural and crystallize in the polar space group (Pmn2 1 ). Seen from their structures, they exhibit a three-dimensional (3D) framework structure that is composed of countless 2D honeycomb layers stacked along the c axis. An interesting feature, specifically, that the LiS 4 tetrahedra connect with each other to build a 2D layer in the ac plane, is also observed. Experimental investigations show that their nonlinear optical responses are about 0.8 for Li 2 HgSiS 4 , 3.0 for Li 2 HgGeS 4 , and 4.0 for Li 2 HgSnS 4 times that of benchmark AgGaS 2 at the 55-88 µm particle size, respectively. In addition, Li 2 HgSiS 4 and Li 2 HgGeS 4 also have great laser-damage thresholds that are about 3.0 and 2.3 times that of powdered AgGaS 2 , respectively. The above results indicate that title compounds can be expected as promising IR NLO candidates.

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Section: Crystal Structurementioning

confidence: 99%

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

Pan

2017

Crystals

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“…These materials are considered to have potential applications in photovoltaic, thermoelectric and optoelectronic devices. [1][2][3][4][5][6][7] For example, Cu 2 ZnSnS 4 and Cu 2 ZnSnSe 4 are found to be good substitutes of conventional CIG(S, Se) solar cells because their band gaps are very close to 1.5 eV.…”

Section: Introductionmentioning

confidence: 99%

“…6 Cu 2 CdSnS 4 and Cu 2 ZnSiSe 4 are proved to be promising nonlinear optical materials for use in the infrared region. 7 Moreover, Cu 2 ZnSiS 4 and Cu 2 ZnSiSe 4 can be used as wide band gap absorbers in solar cells due to their optical fingerprints.…”

Section: Introductionmentioning

confidence: 99%

“…13 Moreover, Debye temperature, infrared spectrum, resistivity and optical nonlinearity are also studied using various techniques. 7,[14][15][16] Meanwhile, it is noticed that (I) the results, such as band gap, 8,9,12 reported by these experiments are quite variable; (II) most of the experiments are only performed on Cu 2 ZnSiS 4 and Cu 2 ZnSiSe 4 ; (III) there is only one report on optical properties. 13 Therefore, the electronic and optical properties of all three compounds still need to be systematically addressed.…”

Section: Introductionmentioning

confidence: 99%

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First-principles study on electronic and optical properties of Cu2ZnSiV I4 (VI=S, Se, and Te) quaternary semiconductors

Zhang

Rao

et al. 2015

AIP Advances

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The electronic and optical properties of Cu2ZnSiS4, Cu2ZnSiSe4 and Cu2ZnSiTe4 in kesterite and stannite structures are systematically studied using first-principles calculations. Crystal field splitting, optical transitions, p-d bonding, and anti-bonding overlapping are analyzed. The physical and chemical trends in these properties are investigated with respect to the crystal structure and anion atomic number. The optical spectra, such as dielectric function, refractive index, reflectivity and absorption coefficient are explored in a broad range of energy. A good agreement between the calculated results and experimental data is obtained.

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“…Beginning from 170 J/m 2 ( Figure 9), a sharp increase of the THG intensity appears. As a reference compound, we have chosen a Cu2ZnSiSe4 crystal that was calibrated earlier [55][56][57]. Figure 9 indicates that such technique allows evaluating the efficiency of the THG intensity determined from angle dependent maxima with respect to the reference sample.…”

Section: Nonlinear Optical Propertiesmentioning

confidence: 99%

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

et al. 2017

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Abstract:The studies of the laser operated third order nonlinear optical features of novel TlGaSn 2 Se 6 crystal were done. The main efforts were devoted to a search of a possibility to apply these crystals as laser operated optoelectronic material. For this reason, the third harmonic generation of the Nd:YAG pulse laser 1064 nm as the fundamental beam with varied energy density of up to 200 J/m 2 was studied. As a source of laser operated light, we have used the cw laser (532 nm), exciting the material above the energy gap. Additionally, the influence of middle-energy Ar + ions on the XPS spectra of the TlInSn 2 Se 6 surface has been explored. We have shown that the main contribution of the Se4p states is manifested in the upper part of the valence band of TlInSn 2 Se 6 We have established that for the TlGaSn 2 Se 6 crystal there exists a possibility of variation of the third harmonic generation efficiency using illumination by external continuous wave laser beam. The discovered effect makes it possible to utilize TlGaSn 2 Se 6 crystal in advanced optoelectronic laser operated devices.

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Optical Nonlinearity in Cu₂CdSnS₄ and α/β-Cu₂ZnSiS₄: Diamond-like Semiconductors with High Laser-Damage Thresholds

Cited by 78 publications

References 39 publications

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

Li2HgMS4 (M = Si, Ge, Sn): New Quaternary Diamond-Like Semiconductors for Infrared Laser Frequency Conversion

First-principles study on electronic and optical properties of Cu2ZnSiV I4 (VI=S, Se, and Te) quaternary semiconductors

Novel Quaternary TlGaSn2Se6 Single Crystal as Promising Material for Laser Operated Infrared Nonlinear Optical Modulators

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