Optical monitoring of technological parameters during molecular-beam epitaxy

Volkov, P.; Goryunov, A. V.; Luk’yanov, A. Yu.; Tertyshnik, A. D.; Новиков, А. В.; Yurasov, D. V.; Baidakova, N. A.; Mikhaĭlov, N. N.; Remesnik, V. G.; Kuzmin, V. D.

doi:10.1134/s1063782612120214

Cited by 18 publications

(8 citation statements)

References 14 publications

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“…Fitting was carried out in the temperature range of 2-25 K and the magnetic fields up to 1 T with only one adjustable parameter B i . According to the theory [8][9][10], the L Th (T ) has a form of the power …”

Section: Resultsmentioning

confidence: 99%

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Magnetotransport in Si langleSb rangle Delta-Layer after Swift Heavy Ion-Induced Modification

Fedotov¹,

Skuratov²,

Yurasov³

et al. 2017

Acta Phys. Pol. A

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In the present paper the investigations of the influence of swift heavy ion irradiation on the magnetotransport in the antimony (Sb) δ-layer in silicon are reported. Temperature and magnetic field dependences of the resistance R(T, B) and the Hall coefficient RH (T, B) in the temperature range of 2 K < T < 300 K and B ≤ 8 T before and after the 167 MeV Xe +26 ion irradiation (ion fluence of 10 8 cm −2 ) were measured. At the temperatures below 50 K there is observed the transition from the Arrhenius log R(1/T ) to a logarithmic R ≈-log(T ) dependence both before and after the swift heavy ion exposure which confirms the assumption that the carrier transport goes through the δ-layer mainly. Moreover, the transition from the positive to negative magnetoresistance was observed with the temperature decrease that is characteristic of the two-dimensional quantum corrections to the conductivity in the case of weak localization regime. The appropriate Thouless lengths L Th (T ) ≈ A × T p (where p and A are dependent on the scattering mechanism) indicated their ≈ 25 − 30% decrease after the swift heavy ion exposure. It was shown that the exponent p values were close to the theoretical one of p = 1, confirming the realization of 2D weak localization regime in the carrier transport.

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Section: Resultsmentioning

confidence: 99%

“…Epitaxial grown Si was deposited with the help of e-beam evaporator, Sb was deposited from the effusion cell. Growth temperature was controlled by a specially calibrated thermocouple and the IMPAC IS 12 IR pyrometer [9]. The δ-doped layer was formed using the selective doping (229) technique described in Ref.…”

Section: Methodsmentioning

confidence: 99%

Magnetotransport in Si langleSb rangle Delta-Layer after Swift Heavy Ion-Induced Modification

Fedotov¹,

Skuratov²,

Yurasov³

et al. 2017

Acta Phys. Pol. A

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“…Taking the ratio between optical thicknesses D g1 and D g2 measured by the positions of the envelope maxima, we arrive at the expression (6) which is independent of the sample thickness and depends only on temperature.…”

Section: Measurements Of the Semiconductor Substrate Thickness With Amentioning

confidence: 99%

“…Low coherence tandem interferometry (LCTI) is a promising optical monitoring method. The possibili ties of the using TLCI in metalorganic vapor phase and molecular beam epitaxy and plasmachemical etching were shown in studies [4][5][6][7].The essence of LCTI lies in the following. Two sequentially coupled interferometers (delay lines) with arm length differences L 1 and L 2 are illuminated by a broadband light source with small coherence length L coh (Fig.…”

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Measurements of the semiconductor substrate thickness with a low-coherence tandem interferometer at a nonstationary temperature

et al. 2015

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Most processes of modern thin film technologies require systems of in situ control of such important technological parameters as the substrate temperature and the growth or etching rate. Optical systems are the most interesting [1][2][3] of the systems that are available for monitoring these parameters due to their high sen sitivity and the absence of mechanical contact between a measured object and a measuring system. Low coherence tandem interferometry (LCTI) is a promising optical monitoring method. The possibili ties of the using TLCI in metalorganic vapor phase and molecular beam epitaxy and plasmachemical etching were shown in studies [4][5][6][7].The essence of LCTI lies in the following. Two sequentially coupled interferometers (delay lines) with arm length differences L 1 and L 2 are illuminated by a broadband light source with small coherence length L coh (Fig. 1). The arm length difference of the first (measuring) interferometer can be controllably tuned. An investigated sample (substrate) serves as the second interferometer. Upon variation in delay L 1 in the first interferometer at the system's output, an interference signal is formed that consists of two peaks. The first peak corresponds to the zero arm length difference of the reference interferometer (L 1 = 0), and the second corresponds to the moment when the optical thick nesses of the interferometer and substrate coincide (L 1 = L 2 ). Thus, if propagation difference L 1 of the measuring interferometer at the instant of time corre sponding to the second interference peak maximum is known, one can obtain the substrate thickness. The LCTI operation was described in more detail in [8].The main problem of using the LCTI in monitor ing real technological processes is that, in general, the optical substrate thickness is measured for two rea sons: the physical thickness variation during the growth/etching and the refractive index variation caused by the change in the substrate temperature [9]. Thus, to date it has been impossible to establish the cause of the detected signal variations.This Letter proposes two original ways of solving this problem.In the LCTI, the interference signal shape is described as [10] (1)Here, z is the interferometer mirror shift relative to the position in which L 1 = 0, I c, 0, 1 are the constants depending on reflectances from the interfaces and loss in the sample, k 0 = 2π/λ 0 , λ 0 is the central wavelength of the source, D = nd is the optical substrate thickness, n is the refractive index of the substrate, d is the geo metrical thickness, and γ(z) is the envelope of the autocorrelation function of the source. For the source with the Gaussian spectrum, we haveAbstract-We propose an original technique for measuring minor variations in the semiconductor structure thickness at nonstationary temperature with the use of the principle of low coherence tandem interferometry. The attained temperature and thickness resolutions are ±2°C and ±2 nm, respectively. SLD BS BS BS PD M M L 2 = 2nd L 1 L 1 −L 2 F n, d S Fig. 1. Schematic ...

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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Yurasov

Дроздов

Zakharov

et al. 2014

Journal of Crystal Growth

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Optical monitoring of technological parameters during molecular-beam epitaxy

Cited by 18 publications

References 14 publications

Magnetotransport in Si langleSb rangle Delta-Layer after Swift Heavy Ion-Induced Modification

Magnetotransport in Si langleSb rangle Delta-Layer after Swift Heavy Ion-Induced Modification

Measurements of the semiconductor substrate thickness with a low-coherence tandem interferometer at a nonstationary temperature

Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

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