2022
DOI: 10.1007/s11082-021-03467-w
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Optical modulator using ultra-thin silicon waveguide in SOI hybrid technology

Abstract: . We propose a detailed study of an on-chip optical modulator using a nonconventional silicon-based platform. This platform is based on the optimum design of ultra-thin silicon on insulator (SOI) waveguide. This platform is characterized by low field confinement inside the core waveguide and high sensitivity to the cladding index. Accordingly, it lends itself to a wide range of applications, such as sensing and optical modulation. By employing this waveguide into the Mach-Zehnder interferometer (MZI) configura… Show more

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Cited by 1 publication
(2 citation statements)
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“…Multiple studies have documented the use of modulators based on Mach–Zehnder interferometric (MZI) designs [ 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 ]. A comprehensive study of an on-chip optical modulator utilizing a non-conventional Si-based platform is proposed [ 73 ]. The platform is based on the optimum design of an ultra-thin Si-on-insulator (SOI) WG, which exhibits low field confinement within the core WG and high sensitivity to the cladding index.…”
Section: Recent Advances In Si Photonics For Telecommunicationmentioning
confidence: 99%
See 1 more Smart Citation
“…Multiple studies have documented the use of modulators based on Mach–Zehnder interferometric (MZI) designs [ 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 ]. A comprehensive study of an on-chip optical modulator utilizing a non-conventional Si-based platform is proposed [ 73 ]. The platform is based on the optimum design of an ultra-thin Si-on-insulator (SOI) WG, which exhibits low field confinement within the core WG and high sensitivity to the cladding index.…”
Section: Recent Advances In Si Photonics For Telecommunicationmentioning
confidence: 99%
“…The platform is based on the optimum design of an ultra-thin Si-on-insulator (SOI) WG, which exhibits low field confinement within the core WG and high sensitivity to the cladding index. Impressive results were obtained, with an extinction ratio (ER) exceeding 20 dB and an energy per bit of 13.21 fJ/bit for an applied voltage of 0.5 V [ 73 ]. The platform’s performance for modulation applications was found to be promising and adequate, with the added advantages of cost effectiveness and ease of fabrication.…”
Section: Recent Advances In Si Photonics For Telecommunicationmentioning
confidence: 99%