Optical microprobe response of GaAs diodes

Ashley, K. L.; Biard, J.R.

doi:10.1109/t-ed.1967.15976

Cited by 42 publications

(4 citation statements)

References 3 publications

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“…The beveled junction method ( 15) was also considered. However there may be a problem of preparing suitable samples for measurement since the thickness of the sample should be in the range of a few microns to perhaps 15 µm.…”

Section: Introductionmentioning

confidence: 99%

Cuprous oxide photovoltaic cells. Third quarterly technical progress report, October 9, 1979 to January 8, 1980

Trivich¹

1980

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Section: Introductionmentioning

confidence: 99%

Cuprous oxide photovoltaic cells. Third quarterly technical progress report, October 9, 1979 to January 8, 1980

Trivich¹

1980

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“…Wittry and Kyser 121 measured the voltage variation of the cathodoluminescence while Aukerman et al [3] irradiated a Schottky barrier diode with electrons and measured the variation of the short circuit photocurrent with dose rate. An optical microprobe method, has also been used in studies on p-n junctions [4]. More recently Hwang [5] has measured the wavelength dependence on the photoluminescence and has used this to study the doping dependence of the hole diffusion length in bulk material.…”

Section: Introductionmentioning

confidence: 99%

Effect of heterostructure on the hole diffusion length of epitaxial GaAs

Young¹,

Rowland²

1973

Phys. Stat. Sol. (a)

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By measuring the short‐circuit photocurrent in a Schottky barrier diode the minority carrier hole diffusion length in undoped epitaxial layers has been determined of GaAs grown on substrates of GaAs and GaP, and in similar structures with a layer of GaxAl1–xAs between the substrate and the epitaxial GaAs layer. In the heteroepitaxial layers grown directly on GaP the hole diffusion length is less than 0.1 μm. This is considerably smaller than the diffusion length in the homoepitaxial layers, which is between 0.2 and 3.0 μm. In the structures with an intermediate layer of GaxAl1–xAs the hole diffusion length is between 0.4 and 1.6 μm and is not significantly different from the homoepitaxial values. Etching studies have been made on the layers in an effort to correlate defect density with diffusion length. In the structures on GaP there is a high density of dislocation and stacking faults. However only in the heteroepitaxial layers directly on GaP does this significantly affect the diffusion length.

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“…We are presenting a quantitative approach to this study by measuring the lifetime of minority carriers in the vicinity of the oxide/semiconductor interface and by estimating the surface recombination velocities near the GaAs/Al x Ga 1Ϫx As interface for xϭ1, 0.98, and 0.96, using the light beam induced current ͑LBIC͒ technique. [8][9][10][11][12][13] LBIC is an established method for characterizing minority-carrier diffusion lengths and recombination velocities both in the bulk, at discontinuities such as those encountered in grain boundaries, at regrown interfaces, 14,15 and heterointerfaces. 8 In the technique, scanning the vicinity of a reverse-biased p-n junction or Schottky junction with a laser beam spot and relating the photocurrent response to the distance between the excitation point and the junction will yield the minority carrier diffusion lengths both in the bulk and at the interface.…”

mentioning

confidence: 99%

“…[8][9][10][11][12][13] LBIC is an established method for characterizing minority-carrier diffusion lengths and recombination velocities both in the bulk, at discontinuities such as those encountered in grain boundaries, at regrown interfaces, 14,15 and heterointerfaces. 8 In the technique, scanning the vicinity of a reverse-biased p-n junction or Schottky junction with a laser beam spot and relating the photocurrent response to the distance between the excitation point and the junction will yield the minority carrier diffusion lengths both in the bulk and at the interface.…”

mentioning

confidence: 99%

Recombination characteristics of minority carriers near the AlxOy/GaAs interface using the light beam induced current technique

Gebretsadik

Zhang

Kamath

et al. 1997

Applied Physics Letters

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The light beam induced current ͑LBIC͒ technique was used to characterize the interface formed by the wet oxidation of AlAs and Al x Ga 1Ϫx As ͑xϭ0.98 and 0.95͒. LBIC scans were used to calculate the diffusion lengths of minority carriers both in the bulk and near these interfaces; and the corresponding interface recombination velocities were estimated. The interface recombination velocity at the oxide/semiconductor interface is 3.13ϫ10 5 cm/s for AlAs, and 1.90ϫ10 4 cm/s for Al 0.98 Ga 0.02 As. It is found that the addition of gallium in the AlAs can significantly improve this property.

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Optical microprobe response of GaAs diodes

Cited by 42 publications

References 3 publications

Cuprous oxide photovoltaic cells. Third quarterly technical progress report, October 9, 1979 to January 8, 1980

Cuprous oxide photovoltaic cells. Third quarterly technical progress report, October 9, 1979 to January 8, 1980

Effect of heterostructure on the hole diffusion length of epitaxial GaAs

Recombination characteristics of minority carriers near the AlxOy/GaAs interface using the light beam induced current technique

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