Abstract:Control and manipulation of single charges and their internal degrees of freedom, such as spins, is a fundamental goal of nanoscience with promising technological applications. Recently, atomically thin semiconductors such as WSe 2 have emerged as a platform for valleytronics, offering rich possibilities for optical, magnetic and electrical control of the valley index [1, 2]. While progress has been made in controlling valley index of ensemble of charge carriers [3-5], valley control of individual charges, cru… Show more
“…It is worth noting that these quantum emitters in our sample mainly result from defects other than strain effect since no intentional strain is introduced. And the emissions are assumed to be neutral excitons which usually appear without applied electric field [22,23]. The defects introduce various trapping energy levels [24,25,28,[49][50][51] within the electronic band gap of the WSe 2 , thus providing possibilities for various transitions.…”
Section: Discussionmentioning
confidence: 99%
“…Meanwhile, the properties of such a 2D host of quantum emitters have been intensely investigated, including 3D localized trions in heterostuctures [19], manipulation of fine structure splitting (FSS) [20] and photon-phonon interaction [21]. Furthermore, the optical initialization of a single spin-valley in charged WSe 2 quantum dots [22] and the ability to deterministically load either a single electron or single hole into a Van der Waals heterostructure quantum device via a Coulomb blockade [23] have been demonstrated, which enable a new class of quantum-confined spin system to store and process information. However, the origin of the 2D host of quantum emitters is still vague.…”
Monolayer transition metal dichalcogenides have recently attracted great interests because the quantum dots embedded in monolayer can serve as optically active single photon emitters. Here, we provide an interpretation of the recombination mechanisms of these quantum emitters through polarization-resolved and magneto-optical spectroscopy at low temperature. Three types of defect-related quantum emitters in monolayer tungsten diselenide (WSe 2 ) are observed, with different exciton g factors of 2.02, 9.36 and unobservable Zeeman shift, respectively. The various magnetic response of the spatially localized excitons strongly indicate that the radiative recombination stems from the different transitions between defect-induced energy levels, valance and conduction bands. Furthermore, the different g factors and zerofield splittings of the three types of emitters strongly show that quantum dots embedded in monolayer have various types of confining potentials for localized excitons, resulting in electron-hole exchange interaction with a range of values in the presence of anisotropy. Our work further sheds light on the recombination mechanisms of defect-related quantum emitters and paves a way toward understanding the role of defects in single photon emitters in atomically thin semiconductors. * xlxu@iphy.ac.cn arXiv:2002.03526v1 [cond-mat.mes-hall]
“…It is worth noting that these quantum emitters in our sample mainly result from defects other than strain effect since no intentional strain is introduced. And the emissions are assumed to be neutral excitons which usually appear without applied electric field [22,23]. The defects introduce various trapping energy levels [24,25,28,[49][50][51] within the electronic band gap of the WSe 2 , thus providing possibilities for various transitions.…”
Section: Discussionmentioning
confidence: 99%
“…Meanwhile, the properties of such a 2D host of quantum emitters have been intensely investigated, including 3D localized trions in heterostuctures [19], manipulation of fine structure splitting (FSS) [20] and photon-phonon interaction [21]. Furthermore, the optical initialization of a single spin-valley in charged WSe 2 quantum dots [22] and the ability to deterministically load either a single electron or single hole into a Van der Waals heterostructure quantum device via a Coulomb blockade [23] have been demonstrated, which enable a new class of quantum-confined spin system to store and process information. However, the origin of the 2D host of quantum emitters is still vague.…”
Monolayer transition metal dichalcogenides have recently attracted great interests because the quantum dots embedded in monolayer can serve as optically active single photon emitters. Here, we provide an interpretation of the recombination mechanisms of these quantum emitters through polarization-resolved and magneto-optical spectroscopy at low temperature. Three types of defect-related quantum emitters in monolayer tungsten diselenide (WSe 2 ) are observed, with different exciton g factors of 2.02, 9.36 and unobservable Zeeman shift, respectively. The various magnetic response of the spatially localized excitons strongly indicate that the radiative recombination stems from the different transitions between defect-induced energy levels, valance and conduction bands. Furthermore, the different g factors and zerofield splittings of the three types of emitters strongly show that quantum dots embedded in monolayer have various types of confining potentials for localized excitons, resulting in electron-hole exchange interaction with a range of values in the presence of anisotropy. Our work further sheds light on the recombination mechanisms of defect-related quantum emitters and paves a way toward understanding the role of defects in single photon emitters in atomically thin semiconductors. * xlxu@iphy.ac.cn arXiv:2002.03526v1 [cond-mat.mes-hall]
“…Moreover, hybrid systems involving NV centers and 2D materials are potential candidates for spin transfer and spin valley physics. The latter has triggered intense research in TMDs and has potential for quantum information and sensing applications . The FRET process investigated here can potentially aid to determine the depth of shallow color centers in SCD given the FRET radius of the WSe 2 /NV pair is precisely known.…”
Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio‐sensing and bio‐imaging to enhanced photodetection and light harvesting. In this work, Förster resonance energy transfer (FRET) between shallow defects in diamond—nitrogen‐vacancy (NV) centers—and atomically thin, 2D materials—tungsten diselenide (WSe2)—is studied. By means of fluorescence lifetime imaging, the occurrence of FRET in the WSe2/NV system is demonstrated. Further, it is shown that in the coupled system, NV centers provide an additional excitation pathway for WSe2 photoluminescence. The results constitute the first step toward the realization of hybrid quantum systems involving single‐crystal diamond and 2D materials that may lead to new strategies for studying and controlling spin transfer phenomena and spin valley physics.
“…As the expected blueshift is U dd ∼ 1/r 3 ex where r ex is the interexcitonic distance, localized interlayer excitons are a good candidate to observe this effect. Localized excitons in monolayer WSe 2 have been shown to be single photon emitters with sharp linewidths [18,19] and can host a single charge and spin [20,21]. Very recently, localized interlayer excitons with sharp linewidths were reported in vdW heterostructures [22].…”
While photons in free space barely interact, matter can mediate interactions between them resulting in optical nonlinearities. Such interactions at the single-quantum level result in an on-site photon repulsion [1, 2], crucial for photon-based quantum information processing and for realizing strongly interacting many-body states of light [3][4][5][6][7]. Here, we report repulsive dipole-dipole interactions between electric field tuneable, localized interlayer excitons in MoSe 2 /WSe 2 heterobilayer. The presence of a single, localized exciton with an out-of-plane, non-oscillating dipole moment increases the energy of the second excitation by ∼ 2 meV -an order of magnitude larger than the emission linewidth and corresponding to an inter-dipole distance of ∼ 5 nm. At higher excitation power, multi-exciton complexes appear at systematically higher energies. The magnetic field dependence of the emission polarization is consistent with spin-valley singlet nature of the dipolar molecular state. Our finding is an important step towards the creation of excitonic few-and many-body states such as dipolar crystals with spin-valley spinor in van der Waals (vdW) heterostructures.Optical response in atomically thin layered semiconductors is determined by excitons and other excitonic complexes such as trions and biexcitons which are strongly bound due to increased Coulomb interactions in truly 2D limit [5,9]. In addition, due to the type-II band alignment in heterobilayer of MoSe 2 /WSe 2 , an interlayer exciton comprising of an electron in the MoSe 2 layer and hole in the WSe 2 layer is found to be stable and long-lived [4,10,11,13]. As shown in Fig. 1a, due to the spatial separation of electron and hole, the interlayer exciton carries a static, out-of-plane electric dipole moment which allows for the tuning of its energy by an external electric field (E). The orientation of this dipole is fixed by the ordering of MoSe 2 and WSe 2 layers and hence leads to a repulsive interaction between interlayer excitons. arXiv:1910.08139v1 [cond-mat.mes-hall] 17 Oct 2019 10 µm WSe2 MoSe2 a b c U d-d on-site E x E x -+ Mo W Se ℎ + − Electric field Figure 1: Interlayer exciton dipoles in WSe 2 /MoSe 2 heterostructure. a, A schematic showing the interlayer exciton in WSe 2 -MoSe 2 heterobilayer under an external electric field E. Due to the type-II band alignment, electron and hole are separated in MoSe 2 and WSe 2 , respectively, forming a permanent out-ofplane dipole. The dipole energy red-shifts (blue-shifts) when E is parallel (anti-parallel) to the direction of dipole. b, Energy diagram of localized interlayer exciton and biexciton in a potential well. The energy of biexciton is raised up by on-site dipole-dipole interaction U on−site dd . c, An optical image of WSe 2 /MoSe 2 heterobilayer with graphite bottom gate. Monolayer WSe 2 (MoSe 2 ) is depicted in orange (yellow) dashed line. The final device has graphite bottom and top gates with h-BN as dielectric on both sides.This dipolar interaction is potentially interesting for inducing e...
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