Optical improved structure of polycrystalline silicon-based thin-film solar cell

Budianu, E.; Purica, M.; Manea, E.; Rusu, E.; Gavrıla, Raluca; Dănilă, M.

doi:10.1016/s0927-0248(01)00169-6

Cited by 13 publications

(11 citation statements)

References 4 publications

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“…They are used as coatings in a variety of devices as large flat screens [1], thin film photovoltaic cells [2], antireflective coatings in conventional silicon solar cells [3], light-emitting diodes (LEDs) [4], etc. ZnO is an n-type wide-band gap semiconductor (3.3 eV) with a hexagonal wurtzite structure.…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

Romero

López

Leinen

et al. 2004

Materials Science and Engineering: B

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Section: Introductionmentioning

confidence: 99%

Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

Romero

López

Leinen

et al. 2004

Materials Science and Engineering: B

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“…The nanocristalline IZO powder were prepared by the solgel method using 20 g of ZAD [Zn(CH 3 COO) 2 IZO thin films were deposited on p-type porous silicon by rf-magnetron sputtering (13.56 MHz) according to El Mir et al process [26]. The sputtering chamber was evacuated to a base pressure of 2-3 9 10 -4 Pa before admitting the sputtered high purity argon gas (99.9999 %) without oxygen.…”

Section: Methodsmentioning

confidence: 99%

“…They are used as coatings in a variety of devices as large flat screens [1], thin film photovoltaic cells [2], light-emitting diodes (LEDs) [3] etc. Among them, zinc oxide (ZnO) have promising properties due to its good electrical and optical properties in combination with low costs, non-toxicity, relatively low deposition temperature [4,5], and it is a versatile material with a wide band gap (3.37 eV) and large exciton binding energy (60 meV) [6].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and electrical properties of Si/PS/ZnO:In solar cell deposited by rf-magnetron sputtering based on nanopowder target material

Belaid

Nouiri

Ayadi

et al. 2015

J Mater Sci: Mater Electron

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Indium doped zinc oxide (IZO) nanopowder synthesized by sol-gel method has been grown onto p type porous silicon substrate by rf-magnetron sputtering at room temperature. The obtained IZO thin films with a thickness of about 400 nm using indium concentration of 4 at%, were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. Atomic force microscopy and scanning electron microscopy were used to study the films morphology. The obtained IZO films, generally used as TCO in solar cells, have a typical columnar structure and very smooth surface. From electrical characterizations: current-voltage (I-V) on dark and under illumination and capacity-voltage (C-V) at different frequency measurements, we can conclude that we have Schottky electronic behaviors where the depletion-layer is developed principally in p-type silicon region. The grown structure is promising for photovoltaic application.

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“…The nanocrystalline IZO powder was prepared by the sol-gel method using 20 g of ZAD [Zn(CH 3 COO) 2 [20][21][22][23][24].…”

Section: Methodsmentioning

confidence: 99%

“…They are used as coating in a variety of devices as large flat screens [1], thin film photovoltaic cells [2], light-emitting diodes (LEDs) [3] etc. Among them, zinc oxide (ZnO) has promising properties due to its good electrical and optical properties in combination with low costs, non-toxicity and relatively low deposition temperature [4,5].…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

et al. 2015

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Indium doped zinc oxide (IZO) thin film has been deposited on p-type porous silicon (PS) substrate by rf-magnetron sputtering of IZO aerogel nanoparticles at room temperature to obtain n-IZO/PS/p-Si heterojunction diode. The obtained IZO film, with a thickness of about 400 nm using indium concentration of 4 at.%, was polycrystalline with a hexagonal wurtzite structure and preferentially orientation in the (002) crystallographic direction. Atomic force microscopy (AFM) micrograph shows that IZO film has a typical columnar structure and a very smooth surface. The heterojunction parameters were evaluated from the current-voltage (I-V) characteristics carried out in the temperature range 80-300 K and capacitance-voltage (C-V) measurements. The ideality factor and barrier height of the heterojunction exhibited strong temperature dependence. The electrical measurements show that the n-IZO/PS/p-Si heterojunction has a Schottky electronic behavior where the depletion-layer is developed principally in the p-type silicon substrate. The tunneling mechanism via deep-level states was the main conduction process at low forward bias, while space-charge-limited current conduction dominated the carrier transport at higher bias. The I-V characteristics under illumination show that the p-n junction exhibits a photovoltaic behavior and is promising for photovoltaic application.

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Optical improved structure of polycrystalline silicon-based thin-film solar cell

Cited by 13 publications

References 4 publications

Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

Fabrication and electrical properties of Si/PS/ZnO:In solar cell deposited by rf-magnetron sputtering based on nanopowder target material

Structural and electrical characterizations of ZnO:In/PS/Si heterojunction deposited by rf-magnetron sputtering

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