Optical gain in silicon nanocrystals

Pavesi, L.; Negro, Luca Dal; Mazzoleni, Cláudio; Franzò, G.; Priolo, F.

doi:10.1038/35044012

Cited by 2,325 publications

(1,215 citation statements)

References 29 publications

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“…Finally, a highly n-type doped (1 × 10 20 at/cm 3 ) polysilicon layer 100 nm thick was deposited and used as a semitransparent gate electrode. The area of devices is 0.09 mm 2 . The details of each of the three layers are resumed in Table 1.…”

Section: Methodsmentioning

confidence: 99%

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Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Ramírez¹,

Jambois²,

Berencén³

et al. 2012

Materials Science and Engineering: B

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a b s t r a c tWe present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er 3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 • C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er 3+ ions have been extracted.

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Section: Methodsmentioning

confidence: 99%

“…Silicon based light sources have been widely investigated for their implementation in integrated photonic circuits [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Ramírez¹,

Jambois²,

Berencén³

et al. 2012

Materials Science and Engineering: B

Self Cite

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“…Because of this property quantum dots are regarded as potential sources for lasers [12,13] and quantum computers [14,15]. Indeed, it has been demonstrated computationally that the energy-level structure of quantum dots changes strongly for different strength of confinement [4,[16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Spectra and correlated wave functions of two electrons confined in a quasi-one-dimensional nanostructure

Sako

Diercksen

2007

Phys. Rev. B

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The energy spectra and wave functions of two electrons confined by a quasi-one-dimensional Gaussian potential have been calculated for different strength of confinement ω z and anharmonicity by using the quantum chemical full configuration interaction method employing a Cartesian anisotropic Gaussian basis set. The energy spectra for a nearly harmonic Gaussian potential have been studied and analyzed in three regimes of ωz, namely, large (ωz = 5.0) medium (ωz = 1.0), and small (ωz = 0.1). For large and medium ω z the energy spectrum shows a band structure which is characterized by the polyad quantum number v p while for small ω z it is characterized by the extended polyad quantum number v * p . The energy levels for small ω z form doublet pairs each of which consists of a pair of singlet and triplet states. The nodal pattern of their wave functions are almost identical to each other except for their phases. The energy spectra for the strongly anharmonic Gaussian potential look quite similar to those of the nearly harmonic case except that an irregular level structure appears in the high energy region for ω z = 0.1. The wave functions of the states in this high energy region have curved nodal lines which align along a pair of bent nodal coordinates. Two types of pairs of bent nodal coordinates have been identified, namely, those passing through the valley of the confining potential and the others passing on the hillside. It is shown that the wave functions with these nodal coordinates correspond to new types of classical local -mode motions of electrons.

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“…Besides their potential as light sources 12,13 , it has been shown that Si nanocrystals are strong candidates for a new generation of Flash memory that can be fabricated with minimal disruption to conventional silicon technology 14 .…”

Section: Introductionmentioning

confidence: 99%

Classification and control of the origin of photoluminescence from Si nanocrystals

et al. 2008

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Silicon dominates the electronics industry, but its poor optical properties mean that III-V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons -highly-localized defect states or quantum confinement effects? -has been the subject of intense debate ever since. Since then attention has shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent UV illumination reintroduces the defects, making them the origin of the light again.

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Optical gain in silicon nanocrystals

Cited by 2,325 publications

References 29 publications

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Polarization strategies to improve the emission of Si-based light sources emitting at 1.55 μm

Spectra and correlated wave functions of two electrons confined in a quasi-one-dimensional nanostructure

Classification and control of the origin of photoluminescence from Si nanocrystals

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