Optical gain in different silicon nanocrystal systems

Fauchet, Philippe M.; Ruan, J.; Chen, H; Pavesi, L.; Negro, Luca Dal; Cazzaneli, M; Elliman, R. G.; Smith, Nathanael J.; Samoć, Marek; Luther‐Davies, Barry

doi:10.1016/j.optmat.2004.08.008

Cited by 77 publications

(27 citation statements)

References 19 publications

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“…This effort ultimately aims toward the development of chipscale waveguide amplifiers [13] and microphotonic light emitters including the elusive silicon-compatible laser [14]. Intriguingly, stimulated emission has been recently reported in silicon nanocrystals near 750 nm [15] and at 1.54 μm with Er-doping [16], but these effects have been difficult to obtain consistently, probably owing to slight variations in the sample fabrication procedures [17]. Because the fluorescence resonance energy transfer (FRET) rate is exponential function of distance between the sensitizers and activators, the ability to achieve a population inversion will be dependent on the spatial relationships amongst the sensitizer and activator species.…”

Section: Introductionmentioning

confidence: 99%

The spatial distribution of silicon NCs and erbium ion clusters by simultaneous high‐resolution energy filtered and Z‐contrast STEM and transmission electron tomography

Wang

Malac

Lockwood

et al. 2011

Phys. Status Solidi (c)

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The interface between aluminum and electroluminescent sexiphenyl (6P) is investigated by means of photoelectron spectroscopy together with quantum mechanical calculations. X‐ray and ultraviolet photoelectron spectroscopy are used to reveal that the interaction of aluminum—often used as the electron‐injecting electrode in light‐emitting diodes—on a 6P surface is of the van der Waals type, i.e., the metal atoms physisorb on the organic compound. In addition, it is calculated that bond formation between Al atoms and phenylene oligomers is not energetically favored.

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Section: Introductionmentioning

confidence: 99%

The spatial distribution of silicon NCs and erbium ion clusters by simultaneous high‐resolution energy filtered and Z‐contrast STEM and transmission electron tomography

Wang

Malac

Lockwood

et al. 2011

Phys. Status Solidi (c)

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“…One of the proposed approaches is to use dielectric matrices with silicon nanocrystals (Si-NCs) or nano-agglomerates as active media. Among several other techniques, chemical methods have been used to fabricate such materials [2][3][4][5][6][7][8][9][10]. The origin of the photoluminescence (PL) of Si-NCs embedded into oxide films is still controversial [11], but there are two principal models commonly used to explain the emission mechanism.…”

Section: Introductionmentioning

confidence: 99%

Luminescent Properties of Silicon Nanocrystals:Spin on Glass Hybrid Materials

et al. 2017

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Abstract:The photoluminescence characteristics of films consisting of Si nanocrystals either coated with or embedded into Spin on Glass (SOG) were studied. Si nanocrystals showing red or blue luminescence when suspended in alcohol solution were obtained from porous silicon films. These were then either deposited in Si substrates and coated with SOG, or mixed in an SOG solution that was later spun on Si substrates. Both types of films were thermally annealed at 1100 • C for three hours in N 2 atmosphere. Transmission electron microscopy measurements showed a mean diameter of 2.5 nm for the Si nanocrystals, as well as the presence of polycrystalline Si nanoagglomerates. These results were confirmed by X-ray diffraction studies, which revealed the (111), (220) and (311) Bragg peaks in Si nanocrystals. Fourier transform infrared spectroscopy studies showed that the coated films present higher chemical reactivity, promoting the formation of non-stoichiometric SiO 2 , while the embedded films behave as a stoichiometric SiO 2 after the thermal annealing. The PL (photoluminescence) characterization showed that both embedded and coated films present emission dominated by the Quantum Confinement Effect before undergoing any thermal treatment. After annealing, the spectra were found to be modified only in the case of the coated films, due to the formation of defects in the nanocrystals/SiO 2 interface.

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“…as a material for light sources. One of the main efforts during last few years has been a search for the silicon laser [1,2]. Several groups have reported recently on the observation of optical gain in various structures containing Si-NCs [3][4][5].…”

Section: Introductionmentioning

confidence: 99%