The spatial distribution of silicon NCs and erbium ion clusters by simultaneous high‐resolution energy filtered and Z‐contrast STEM and transmission electron tomography

Abstract

The interface between aluminum and electroluminescent sexiphenyl (6P) is investigated by means of photoelectron spectroscopy together with quantum mechanical calculations. X‐ray and ultraviolet photoelectron spectroscopy are used to reveal that the interaction of aluminum—often used as the electron‐injecting electrode in light‐emitting diodes—on a 6P surface is of the van der Waals type, i.e., the metal atoms physisorb on the organic compound. In addition, it is calculated that bond formation between Al atoms and phenylene oligomers is not energetically favored.

Limit to the erbium ions emission in silicon-rich oxide films by erbium ion clustering

“…It is worth mentioning that similar local inhomogeneity in erbium ions spatial distribution and the tendency to clusterize in silicon rich oxide films have been reported previously in thin films prepared with very different deposition techniques [20][21][22][23][24]. Thus, this type of behavior is not inherent to LPCVD but is quite general for Er 3+ concentrations larger than 10 20 at./cm 3 [20][21][22][23][24].…”

“…Thus, this type of behavior is not inherent to LPCVD but is quite general for Er 3+ concentrations larger than 10 20 at./cm 3 [20][21][22][23][24]. Er 3+ emission can be observed in our samples both by non-resonant ( Fig.…”