Optical gain and stimulated emission in periodic nanopatterned crystalline silicon

Cloutier, Sylvain G.; Kossyrev, Pavel A.; Xu, Jimmy

doi:10.1038/nmat1530

Cited by 260 publications

(169 citation statements)

References 26 publications

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“…4 A silicon-based optically pumped laser was reported in 2005, with a nano-patterned silicon film, where the light emission originated from defects in the etched side walls of the film. 5 A Si Raman laser was demonstrated by Boyraz et al 6 and, very recently, Camacho et al 7 made use of heavily n-doped Ge under 0.2% tensile strain to demonstrate an electrically pumped laser. The threshold current density, however, is prohibitively large for practical applications.…”

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confidence: 99%

Tensely strained GeSn alloys as optical gain media

Wirths¹,

Ikonić²,

Tiedemann³

et al. 2013

Applied Physics Letters

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This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying soften the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge 0.94 Sn 0.06 and even without any n-type doping for Ge 0.92 Sn 0.08 .

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confidence: 99%

Tensely strained GeSn alloys as optical gain media

Wirths¹,

Ikonić²,

Tiedemann³

et al. 2013

Applied Physics Letters

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“…Many different strategies have been explored to make silicon an efficient infrared emitter at strategic telecom wavelengths, including doping with rare-earth atoms, 2,3 or exploiting optically active structural defects. [4][5][6][7][8] Though very promising, devices based on silicon subband gap luminescence are still impractical because emission intensity is strongly quenched for temperatures above Ӎ100 K and becomes almost undetectable at room temperature. In such devices, enhancement of light emission relies on the combination of two complementary strategies, defect engineering and device engineering.…”

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confidence: 99%

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Savio

Portalupi

Gerace

et al. 2011

Applied Physics Letters

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Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures.

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“…[4]), light-emitting diodes containing SiO 2 nanoclusters [5], or nanopatterned silicon-on-insulator emitters [6]. Others consider band-structure engineering that allows overcoming the indirect bandgap in Si/SiO 2 [7] and Si/SiGe [8,9] superlattices, where intersubband optical transitions are used [10].…”

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confidence: 99%

The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov

Жукавин

Shastin

et al. 2012

Physica Status Solidi (b)

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The first silicon laser was reported in the year 2000. It is based on impurity transitions of the hydrogen-like phosphorus donor in monocrystalline silicon. Several lasers based on other group-V donors in silicon have been demonstrated since then. These lasers operate at low lattice temperatures under optical pumping by a midinfrared laser and emit light at discrete wavelengths in the range from 50 to 230 mm (between 1.2 and 6.9 THz). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized for donortype terahertz (THz) silicon lasers. Population inversion is achieved due to specific electron-phonon interactions of the impurity atom. This results in long-living and short-living excited states of the donor centers. Another type of THz laser utilizes stimulated resonant Raman-type scattering of photons by a Raman-active intracenter electronic transition. By varying the pump-laser frequency, the frequency of the Raman intracenter silicon laser can be continuously changed between at least 4.5 and 6.4 THz. The gain of the donor and Ramantype THz silicon lasers is of the order of 0.5 to 10 cm À1 , which is similar to the net gain realized in THz quantum cascade lasers and infrared Raman silicon lasers. In addition, fundamental aspects of the laser process provide new information about the peculiarities of electronic capture by shallow impurity centers in silicon, lifetimes of nonequilibrium carriers in excited impurity states, and electron-phonon interaction.

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Optical gain and stimulated emission in periodic nanopatterned crystalline silicon

Cited by 260 publications

References 26 publications

Tensely strained GeSn alloys as optical gain media

Tensely strained GeSn alloys as optical gain media

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

The physical principles of terahertz silicon lasers based on intracenter transitions

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