Optical emission generated from silicon under dual-wavelength femtosecond double-pulse laser irradiation

Abstract

In femtosecond double-pulse laser-induced breakdown spectroscopy, collinear double-pulse performance is investigated experimentally using various laser wavelength combinations of 800 nm and 400 nm Ti: sapphire lasers. The induced plasma emission line collected by BK7 lenses is the Si (I) at 390.55 nm. The double-pulse time separation ranges from -300 ps to 300 ps. The line intensity is dependent on the time separation of the dual-wavelength femtosecond double-pulse, and its behavior is unlike that of single-wavelength femtosecond double-pulses. Optical emission intensity can be enhanced by selecting appropriate time separation between sub-pulses. This result is particularly advantageous in the context of femtosecond laser-induced breakdown spectroscopy.

Effect of metal substrate temperature on the determination of trace metal elements in water by combined LIBS with electro-deposition

“…In addition, the emission intensity is proportional to the particle number density. 33 Therefore, the line intensity of Pb and Cr atoms is also proportional to C , which means, increasing the concentration of Pb and Cr is equivalent to increasing the emission of Pb and Cr atoms.…”

Comparison of sample temperature effect on femtosecond and nanosecond laser-induced breakdown spectroscopy

“…The plasma temperature was obtained by the Boltzmann plot and the plasma was in local thermodynamic equilibrium (LTE). The equation is as follows [41][42][43]:…”

Dynamics and its modulation of laser-induced plasma and shockwave in femtosecond double-pulse ablation of silicon

“…For example, temporally shaped femtosecond double pulses were used to provide a path for the second pulse to interact with the ablation components excited by the first pulse, thereby facilitating the control of plume composition (atoms, ions, and nanoparticles). 19) The enhancement of plasma optical emission induced by double pulses has also been reported within femtosecond laser ablation of metals, 20,21) semiconductors, 22,23) and dielectrics 24) compared with that induced by single pulse with identical total energy. However, few studies have been reported on the shockwave expansion dynamics in doublepulse ablation.…”