Optical, electrical properties and reproducible resistance switching of GeO2 thin films by sol–gel process

Growth of small GeO2 single crystals on a polyvinyl chloride substrate at room temperature using oversaturate aqueous solution

“…As compared to silicon dioxide, germanium dioxide has higher permittivity and more than twice as high piezoelectric constant, while these properties remain up to about 1273 K; in addition, germanium dioxide is reported to feature excellent electrical characteristics as a variable resistance memory . For this reason, germanium is now being reconsidered as a next‐generation material for electronic devices, while chemical characteristics and usage of germanium dioxide are gaining importance in design of advanced electronic devices .…”

“…As compared to silicon dioxide, germanium dioxide has higher permittivity 1 and more than twice as high piezoelectric constant, while these properties remain up to about 1273 K 2 ; in addition, germanium dioxide is reported to feature excellent electrical characteristics as a variable resistance memory. 3 For this reason, germanium is now being reconsidered as a next-generation material for electronic devices, while chemical characteristics and usage of germanium dioxide are gaining importance in design of advanced electronic devices. 4 Germanium dioxide can take crystal structure ofquartz type or cristobalite type, while likely taking amorphous form; though it resembles silicon dioxide, a number of distinctions are known including water solubility and organic polymerization catalytic activity.…”

Photoelectric Memristor-Based Machine Vision for Artificial Intelligence Applications

“…For the realization of memristors with high-performance resistive switching behaviors, the fabrication process of the device is extremely important. To date, the preparation methods of memristors mainly include magnetron sputtering, atomic layer deposition, pulsed laser deposition, spin coating method, sol–gel method, hydrothermal method, and so on. − The emerging new memory technologies include magnetic random access memory (MRAM), ferroelectric random access memory (FeRAM), phase change random access memory (PCRAM), and resistive random access memory (RRAM). − FeRAM and PCRAM are limited by the material itself, which makes it difficult to improve the characteristics . MRAM is limited by the complex material and structure, small memory window, and other factors.…”

Memristor-based neural networks: a bridge from device to artificial intelligence

“…Nowadays, the preparation of memristive devices can be achieved using many physical and chemical methods, such as atomic layer deposition, spin-coating method, magnetron sputtering, sol-gel method, pulsed laser deposition, and so on. 23–26…”