Optical, electrical and structural properties of Cu2Te thin films deposited by magnetron sputtering

Ferizovic, Dino; Muñoz, Martı́n

doi:10.1016/j.tsf.2011.04.027

Cited by 30 publications

(20 citation statements)

References 3 publications

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“…The KK-transformed ε1(ω) has the lowest sharp peak at 1.15 eV, resulting in a very high n = 5.65. which is close to our value of 6.01. For crystalline Cu2Te, we find an experimental study reporting n to be between 3.0 -6.0 [92] close to what we got (n = 5.470). It should be noted that our calculated optical band gap for Cu2Te is 0.0 eV which contributed to the large n similar to other chalcogenides just discussed.…”

Section: Optical Propertiessupporting

confidence: 89%

Total Bond Order Density as a Quantum Mechanical Metric for Materials Design: Application to Chalcogenide Crystals

Hasan¹,

Baral²,

Ching³

2019

Preprint

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Materials design for processing and application requires fundamental understanding of their properties based interatomic interaction. The use of the novel concept of total bond order density (TBOD) as a single quantum mechanical metric to characterize the internal cohesion of a crystal and correlate with the calculated physical properties is particularly appealing. This requires detailed first-principles calculation of the electronic structure, interatomic bonding and related properties. In this article, we use this new concept and apply it to chalcogenide crystals based on data obtained from 25 crystals: Ag2S, Ag2Se, Ag2Te, As2S3, As2Se3, As2Te3, As4Se4, Cu2S, Cu2Se, Cu2Te, Cu4GeS4, Cu2SnS3, Cu2SnSe3, GeS2, GeSe2, Ge4Se9, Sb2S3, Sb2Se3, Sb2Te3, SnS, SnSe, CdSe, CdTe, ZnSe, and ZnTe. Together with the calculated optical and mechanical properties, we demonstrate the efficacy of using this novel approach for materials design that could facilitate the exploration and development of new chalcogenide crystals and glasses. Moreover, the TBOD and its partial components (PBOD) could be the key descriptors in machine learning protocol for broader scale design when a large database is available.

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Section: Optical Propertiessupporting

confidence: 89%

Total Bond Order Density as a Quantum Mechanical Metric for Materials Design: Application to Chalcogenide Crystals

Hasan¹,

Baral²,

Ching³

2019

Preprint

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“…6a . To gain insight into the origin of this inelastically scattered light, it must be recalled that copper tellurides are p -type materials with rather large free hole densities of the order of 10 20 –10 21 cm −3 2 , 7 . For the films reported here, the free carrier density was of the order of 10 21 cm −3 (in two cases only slightly above 10 22 cm −3 ), vide infra .…”

Section: Resultsmentioning

confidence: 99%

“…Previous studies report that the Cu 2−x Te system is a p -type material with typically hole concentrations between 10 20 –10 21 cm −3 , and resistivities of the order of 10 −4 Ω cm 2 , 7 . In this work, the most conductive sample had a resistivity of 1.52 × 10 −4 Ω cm, with a mobility of 3.22 cm 2 /Vs and carrier density of 1.48 × 10 22 cm −3 .…”

Section: Resultsmentioning

confidence: 99%

“…Nevertheless, despite of the many studies on thin films composed by the Cu 2−x Te system fabricated by various methods, a comprehensive study is yet missing, principally on the technologically important sputtered films. Minor variations on the growth conditions and target composition of sputtered cuprous telluride thin films, as reported by various authors 5 , 7 – 9 , may give the advantage of tuning the electrical and optical properties. In addition, there are not thorough reports on the vibrational properties of the system.…”

Section: Introductionmentioning

confidence: 97%

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Vibrational and electrical properties of Cu2−xTe films: experimental data and first principle calculations

Salmón-Gamboa

Barajas-Aguilar

Ruiz-Ortega

et al. 2018

Sci Rep

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Vibrational and electrical properties of sputtered films of the copper telluride system are presented. Despite of its technological importance in photovoltaics, the fundamental properties of copper tellurides are poorly understood. Films were deposited at 200 °C by rf sputtering from targets containing mixtures of copper and tellurium powders at nominal concentrations of Cu1.25Te, Cu1.5Te, Cu1.75Te and Cu2Te. Remarkably for the copper telluride system, it was possible to obtain single-phase vulcanite (CuTe) from the Cu1.25Te target. Two-phase mixtures of rickardite (Cu7Te5) and weissite (Cu2−xTe) were achieved for other cases. Raman spectra were obtained using two laser lines: 633 and 488 nm. Density functional theory was employed to calculate the phonon dispersion curves and density of states for vulcanite. The Raman bands were in good correspondence with the calculated frequencies. In general, the Raman spectra consisted of high-intensity totally symmetric modes superimposed on monotonically decaying signals. These were explained in terms of three contributing phenomena: convolution of vibrational normal modes, phonon-coupled charge density fluctuations and time-varying local-field contributions to the electric susceptibility. Studies on the conductivity, mobility and carrier concentration were carried out by the Van der Pauw method. Micro/nano scale surface potential studies were performed through Kelvin probe force microscopy mapping.

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“…Carrier concentration of deposited films is in the range of 10 20 -10 21 cm -3 . Ferizovic et al [7] (Cu 2 Te) and Luo et al [24] (Cu 1.4 Te) also reported that carrier concentration is in the order of…”

Section: Electrical Propertiesmentioning

confidence: 94%

Influence of substrate temperature on the structural, morphological, optical and electrical properties of copper telluride thin films prepared by electron beam evaporation method

2017

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Optical, electrical and structural properties of Cu2Te thin films deposited by magnetron sputtering

Cited by 30 publications

References 3 publications

Total Bond Order Density as a Quantum Mechanical Metric for Materials Design: Application to Chalcogenide Crystals

Total Bond Order Density as a Quantum Mechanical Metric for Materials Design: Application to Chalcogenide Crystals

Vibrational and electrical properties of Cu2−xTe films: experimental data and first principle calculations

Influence of substrate temperature on the structural, morphological, optical and electrical properties of copper telluride thin films prepared by electron beam evaporation method

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