Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol–gel method

Vishwas, M.; Rao, K. Narasimha; Phani, A.R.; Gowda, K.V. Arjuna; Chakradhar, R.P.S.

doi:10.1016/j.ssc.2011.10.040

Cited by 27 publications

(16 citation statements)

References 16 publications

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“…Lapisan tipis ZnO dapat disintesis melalui both Solution dan metode berbasis Vakum, yaitu metode berbasis vakum Pulsed Laser Deposition (PLD), Chemical vapour deposition (CVD), Sputtering, Laser ablation, spray pyrolysis [6] [7]. Meskipun metode diatas menghasilkan kualitas yang tinggi tetapi teknik ini membutuhkan peralatan yang rumit dan mahal.…”

Section: Pendahuluanunclassified

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Karakterisasi Sifat Optik Lapisan Tipis ZnO doping Al yang di Deposisi diatas Kaca dengan Metode Sol-Gel Teknik Spray-Coating (Halaman 38 s.d. 40)

Durri

Sutanto

2015

J. Fis. Indones.

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Abstrak -Telah dilakukan sintesis dan deposisi ZnO doping Al mengunakan metode sol-gel teknik spray coating. Lapisan tipis ZnO dengan variasi doping Al diuji menggunakan UV-Vis Spestroscopy. Pengaruh penambahan doping Al pada lapisan tipis ZnO mempengaruhi pergeseran (Shift Blue) pada panjang gelombang 360 nm-380 nm, nilai transmitansi lapisan tipis pada sinar tampak dengan rentang 64%-96% dan lapisan tipis ZnO tanpa doping nilai transmitansi pada sinar tampak rata-rata lebih dari 90%. Energi celah pita optik Eg meningkat seiring dengan meningkatnya konsentrasi doping dari 0%, 2% dan 4% dengan nilai Eg 3,102 3,115 eV dan 3,118 eV. Abstract -Has performed the synthesis and deposition of Al doped ZnO using sol-gel method, spray coating technique. ZnO thin film with doping variation Al tested using UV -Vis Spestroscopy. Effect of the addition of Al doping in ZnO thin film affects the shift blue at a wavelength of 360 nm -380 nm , the transmittance values of thin film in the visible wavelength with a range of 64 % -96 % and ZnO pure thin film on visible light transmittance value of the mean average more than 90 %. The optical band gap energy increased as the doping concentration was increased from 0%, 2% and 4% with Eg value 3,102 eV,3,115 eV and 3,118 eV.

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Section: Pendahuluanunclassified

“…Nilai n dapat dideduksi oleh persamaan (1), bahwa semua lapisan tipis yang didoping memiliki celah pita langsung sehingga menggunakan nilai n 0,5 [12]. Selanjutnya, celah pita dihitung dengan menarik garis linier pada ploting (αhν) 2 dengan energi foton (hν) yang terlihat pada persamaan (2 [7].…”

Section: Hasil Dan Pembahasanunclassified

Karakterisasi Sifat Optik Lapisan Tipis ZnO doping Al yang di Deposisi diatas Kaca dengan Metode Sol-Gel Teknik Spray-Coating (Halaman 38 s.d. 40)

Durri

Sutanto

2015

J. Fis. Indones.

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“…Among these techniques, the SGDC technique has a considerable interest because it offers many advantages over the conventional coating methods such as higher purity, lower cost, easier fabrication route, a better control over chemical composition in multicomponent systems, and lower processing temperature [8,9]. The sol-gel technique is also preferred because of the easy film deposition in small or large areas on various substrates at room temperature [10]. The sol-gel technique can be performed essentially in two ways: the spin coating and the dip coating [11].…”

Section: Introductionmentioning

confidence: 99%

Structural and electrical characterizations of BiFeO3 capacitors deposited by sol–gel dip coating technique

et al. 2015

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“…Metal oxide thin films were deposited by various physical [5], [6] and chemical methods [7], [8]. ZnFe 2 O 4 thin film or powder was prepared by various methods, including hydrothermal synthesis [9], co-precipitation method [10], and sol-gel method [11].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of ZnFe<sub>2</sub>O<sub>4</sub> Thin Film Based Metal-Insulator-Semiconductor Capacitors

Vishwas

Rao

Raichur

2015

ILCPA

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Thin films of zinc ferrite (ZnFe 2 O 4 ) were deposited on glass, quartz and p-silicon (100) substrates by the sol-gel method. The structural properties of the films were studied using x-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The XRD data show the film having a spinel structure and the crystalline phase exists after annealing at 500 o C for 2 h in air. The SEM and AFM images show the nano-crystalline nature of the films. The optical transmittance decreased with increase of annealing temperature. The optical band gap energy was estimated at different annealing temperatures and found to be 2.71 eV after annealing at 400 o C. The metal-insulator-semiconductor (MIS) capacitors were fabricated using ZnFe 2 O 4 films on p-silicon (100) substrates. The capacitance-voltage (C-V), dissipation-voltage (D-V) and currentvoltage (I-V) characteristics were studied. The dependence of dielectric constant on annealing temperature and signal frequency was analyzed. The variation of current density and resistivity of the ZnFe 2 O 4 films with annealing temperature was also explored.

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Optical, electrical and structural characterization of ZnO:Al thin films prepared by a low cost sol–gel method

Cited by 27 publications

References 16 publications

Karakterisasi Sifat Optik Lapisan Tipis ZnO doping Al yang di Deposisi diatas Kaca dengan Metode Sol-Gel Teknik Spray-Coating (Halaman 38 s.d. 40)

Karakterisasi Sifat Optik Lapisan Tipis ZnO doping Al yang di Deposisi diatas Kaca dengan Metode Sol-Gel Teknik Spray-Coating (Halaman 38 s.d. 40)

Structural and electrical characterizations of BiFeO3 capacitors deposited by sol–gel dip coating technique

Fabrication and Characterization of ZnFe<sub>2</sub>O<sub>4</sub> Thin Film Based Metal-Insulator-Semiconductor Capacitors

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