Optical, electrical and photovoltaic properties of thermally evaporated 3-amino-2-[(2-nitrophenyl)diazinyl]-3-(piperidin-1-yl)acrylonitrile thin films

El-Menyawy, E.M.; Elagamey, A. A.; El‐Gogary, Sameh R.; El-Enein, R. A. N. Abu

doi:10.1016/j.mssp.2013.06.010

Cited by 8 publications

(5 citation statements)

References 26 publications

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“…4. At relatively low forward applied voltages, the relation is linear and the current of the device can be described by the standard diode equation given by [17]:…”

Section: Resultsmentioning

confidence: 99%

Current–voltage characteristics and inhomogeneous barrier height analysis of Au/poly(o-toluidine)/p-Si/Al heterojunction diode

El-Menyawy¹,

Ashery²

2014

J Mater Sci: Mater Electron

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Thin films of poly(o-toluidine) (POT) with amorphous structure were prepared onto the surface of p-Si single crystal by spin coating technique. The electrical conduction mechanisms and related parameters of the Au/ POT/p-Si/Al heterojunction diode were investigated using current-voltage (I-V) characteristics in temperature range 298-378 K. The device showed rectifying behavior. At relatively low forward applied voltages; the current through the junction has been analyzed on the bases of the standard thermionic emission theory. The ideality factor decreases with increasing temperature, whereas the barrier height increases. This behavior could be elucidated in terms of inhomogeneity model of barrier heights. In addition, the values of series resistance, ideality factor and effective barrier height at zero-bias are determined at different temperatures by using Cheung's functions. At relatively high forward bias voltages, analysis of the double logarithmic I-V characteristics indicates that transport through the device is controlled by a space-charge-limited current process characterized by single trap of distribution in which the related parameters are estimated. Data analysis in reverse direction showed that the current can be described in terms of Poole-Frenkel mechanism at low applied voltage and in terms of Schottky mechanism at higher applied voltage.

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“…4. At relatively low forward applied voltages, the relation is linear and the current of the device can be described by the standard diode equation given by [17]:…”

Section: Resultsmentioning

confidence: 99%

Current–voltage characteristics and inhomogeneous barrier height analysis of Au/poly(o-toluidine)/p-Si/Al heterojunction diode

El-Menyawy¹,

Ashery²

2014

J Mater Sci: Mater Electron

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“…This outcome has been proven by numerous reports [7][8][9][10]. A study done by El-Menyawy et al [11] has illustrated that energy band gap, E g of ANPA thin film drop off from 2.47eV to 2.1eV for an increase in film thickness from 105nm to 265nm. The same outcomes on metal thin films have also been reported.…”

Section: Introductionmentioning

confidence: 69%

Thickness Dependent on Energy Band Gap and Electrical Conductivity of Undoped Conjugated Polymer Thin Films

Salleh

Isa

2016

MSF

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Conjugated polymers have been widely used for electronic purpose applications due to their numerous advantages. This has led many researches to pay their major attention in studying on characteristics of conjugated polymer thin films. The purpose of this study was to investigate the effect of undoped conjugated polymer thin films on their optical and electrical properties. Poly(3-thiophene acetic acid), Polypyrrole and Polythiophene thin film was fabricated on ITO glass substrate by using EIS. Film thickness, energy band gap and electrical conductivity of thin films were characterized by using profilometer, ultraviolet-visible spectrometer and four point probe method respectively. The thickness of each thin film varied between 50.534 nm to 97.03 nm. The result has shown that thicker film has lower energy band gap compared to the thinner one. However the electrical conductivity showed an opposite behavior.

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“…The I M and V M values are graphically determined as 3.98 Â 10 À 4 A and 0.24 V, respectively. The fill factor (FF) and electrical conversion efficiency (η) of the device are estimated from the expressions given by [43] FF ¼ I M V M I sc V oc ð14Þ and η ¼ V oc I sc FF AP in 100ð%Þ ð 15Þ…”

Section: Resultsmentioning

confidence: 99%

Optical, electrical and photovoltaic properties of thermally evaporated 3-amino-2-[(2-nitrophenyl)diazinyl]-3-(piperidin-1-yl)acrylonitrile thin films

Cited by 8 publications

References 26 publications

Current–voltage characteristics and inhomogeneous barrier height analysis of Au/poly(o-toluidine)/p-Si/Al heterojunction diode

Current–voltage characteristics and inhomogeneous barrier height analysis of Au/poly(o-toluidine)/p-Si/Al heterojunction diode

Thickness Dependent on Energy Band Gap and Electrical Conductivity of Undoped Conjugated Polymer Thin Films

Electrical and photovoltaic properties of Gaussian distributed inhomogeneous barrier based on tris(8-hydroxyquinoline) indium/p-si interface

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