Electrical and photovoltaic properties of Gaussian distributed inhomogeneous barrier based on tris(8-hydroxyquinoline) indium/p-si interface

El-Menyawy, E.M.

doi:10.1016/j.mssp.2015.01.017

Cited by 23 publications

(7 citation statements)

References 44 publications

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“…The use of an increased barrier diode as gate provides an adequate barrier height for FET operation and the fabrication of the devices, which range from the majority carrier dominated Schottky diodes to bipolar p-n junctions [8][9][10][11][12][13]. The deviations from linearity at low bias voltages in the forward I-V part are due to the shunt resistance or excess current [26][27][28][29].…”

Section: Resultsmentioning

confidence: 99%

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Türüt

Karabulut

Ejderha

et al. 2015

Materials Science in Semiconductor Processing

117

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We have studied the admittance and current-voltage characteristics of the Au/Ti/Al 2 O 3 /n-GaAs structure. The Al 2 O 3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance R s. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.

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Section: Resultsmentioning

confidence: 99%

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Türüt

Karabulut

Ejderha

et al. 2015

Materials Science in Semiconductor Processing

117

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“…The rectifying I-V characteristics at low applied voltages could be described by thermionic emission theory. The current flows across the junction can be expressed by [24]:…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

Structural, optical and device characteristics of 1-(2-(1,5-dimethyl-3-oxo-2-phenyl-2,3-dihydro-1H-pyrazol-4-yl)-2-oxoethyl)pyridinium chloride

et al. 2016

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1-(2-(1,5-Dimethyl-3-oxo-2-phenyl-2,3-dihydro-1H-pyrazol-4-yl)-2-oxoethyl)pyridinium chloride (DOPC) was chemically synthesized and showed thermal stability up to 220°C. DOPC powder has polycrystalline structure and crystallizes in triclinic structure with space group, P 1. Miller indices for each diffraction plan in X-ray diffraction spectra are determined. DOPC films have been prepared via spin-coating technique onto quartz and silicon single crystal substrates. The optical properties of the films are investigated by spectrophotometric measurements of the transmittance and reflectance over the spectral range 200-2500 nm. The absorption coefficient and the refractive index of the films are calculated in which the optical band gap and single oscillator parameters are estimated. Hybrid Au/DOPC/p-Si/Al heterojunction is constructed, and the dark current-voltage characteristics are recorded. The device exhibited rectification behavior and the basic parameters such as ideality factor, barrier height, series resistance and charge carrier mobility are evaluated.

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“…As can be seen from the figure that, all curves are linear, at low forward bias voltages (Vr0.32 V), but it deviates considerably from linearity at high forward bias voltages due to the effects of many factors such as series resistance, interfacial insulator layer and interface states. The current in the device can be described by standard diode equation according to the thermionic emission theory [27]:…”

Section: Optical Propertiesmentioning

confidence: 99%

Geometrical and crystal structures, optical absorption and device characterization of N-(5-{[antipyrinyl-hydrazono]-cyanomethyl}-[1,3,4]thiadiazol-2-yl)-benzamide

Zedan

El-Ghamaz

El-Menyawy

2015

Materials Science in Semiconductor Processing

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Electrical and photovoltaic properties of Gaussian distributed inhomogeneous barrier based on tris(8-hydroxyquinoline) indium/p-si interface

Cited by 23 publications

References 44 publications

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Capacitance–conductance–current–voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

Structural, optical and device characteristics of 1-(2-(1,5-dimethyl-3-oxo-2-phenyl-2,3-dihydro-1H-pyrazol-4-yl)-2-oxoethyl)pyridinium chloride

Geometrical and crystal structures, optical absorption and device characterization of N-(5-{[antipyrinyl-hydrazono]-cyanomethyl}-[1,3,4]thiadiazol-2-yl)-benzamide

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