Geometrical and crystal structures, optical absorption and device characterization of N-(5-{[antipyrinyl-hydrazono]-cyanomethyl}-[1,3,4]thiadiazol-2-yl)-benzamide

Zedan, I.T.; El-Ghamaz, N.A.; El-Menyawy, E.M.

doi:10.1016/j.mssp.2015.05.033

Cited by 8 publications

(3 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although n value is still greater than unity, it is better than that obtained for OG interlayer between Au and n-Si [3]. Several authors have been investigated the effect of the organic interlayer on the performance of n-Si [10,11,17,18]. Takanashi et al [17] estimated the values of ϕ and n of 0.75 eV and 3.3, respectively, for Au/␣-sexithiophene/n-Si heterojunction using Cheung method.…”

Section: Morphology Of Insa Filmsmentioning

confidence: 99%

See 1 more Smart Citation

Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode

Zedan¹,

El-Menyawy²,

Nawar³

2019

Opto-Electronics Review

Self Cite

View full text Add to dashboard Cite

In this paper, of primary interest is to synthesis 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid (INSA) and to evaluate the main parameters of Au/INSA/n-Si/Al diode in dark and under illumination. Different techniques are used for interpreting the proposed INSA chemical structure. The dark current-voltage measurements were achieved in the temperature range of 293−413 K. It is noticed that INSA films modify the interfacial barrier height of classical Au/n-Si junction. At low applied voltages, the I-V relation shows exponential behavior. The values ideality factor, n, and the barrier height, ϕ, are improved by heating. The abnormal trend of n and ϕ is discussed, and a homogenous barrier height of 1.45 eV is evaluated. The series resistance is also calculated using Norde's function and it changes inversely with temperature. The space charge limited current ruled with exponential trap distribution dominates at relatively high potentials, trap concentration and carriers mobility are extracted. The reverse current of the diode has illumination intensity dependence with a good photosensitivity indicating that the device is promising for photodiode applications.

show abstract

Section: Morphology Of Insa Filmsmentioning

confidence: 99%

“…It is well known that the introduction of organic films, as inter-layer between metals and inorganic semiconductors, modifies performance of the classical diodes due to the interfacial properties [8][9][10][11]. These devices are more preferred than conventional metal/inorganic diodes due to their fascinating properties [9,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode

Zedan¹,

El-Menyawy²,

Nawar³

2019

Opto-Electronics Review

Self Cite

View full text Add to dashboard Cite

show abstract

“…This behaviour indicates the potential utility of MBB in the upgrade and design of various optoelectronic applications. Zedan et al (2015) have reported a band gap of 2.9 eV for N-{5-[(antipyrinylhydrazono)cyanomethyl][1,3,4]thiadiazol-2-yl}benzamide.…”

Section: Tablementioning

confidence: 99%

An insight into the synthesis, crystal structure, geometrical modelling of crystal morphology, Hirshfeld surface analysis and characterization ofN-(4-methylbenzyl)benzamide single crystals

et al. 2017

View full text Add to dashboard Cite

A versatile approach for the synthesis ofN-(4-methylbenzyl)benzamide, C15H15NO, using CuI as catalyst has been reported. Single crystals of the synthesized compound were grown using the slow evaporation solution technique. The crystal structure of theN-(4-methylbenzyl)benzamide crystals has been determined by single-crystal X-ray diffraction. The compound crystallizes in an orthorhombic lattice, noncentrosymmetric space groupPna21. The crystal structure is stabilized by intermolecular N—H...O hydrogen bonds and weak C—H...π interactions to form layers parallel to theaaxis. A user-friendly approach based on centre of mass propagation vector theory was used to predict the crystal morphology. The framework developed here utilizes the concept of intermolecular bond strength to discern the crystal morphology. Fourier transform IR, NMR and high-resolution mass spectrometry analytical techniques were used for the identification of functional groups and confirmation of the structure of the title compound. All of the intermolecular interactions present in the crystal structure, including the C—H...π, C—H...O and N—H...O interactions, were investigated and confirmed by molecular Hirshfeld surface analysis. From linear optical spectroscopy, the transmittance, optical band gap and UV cutoff wavelength were determined. The photoluminescence emission spectrum was recorded for a grown crystal. Dielectric measurements were performed at room temperature for various frequencies. The mechanical strength of the (001) plane of the title compound was measured using the Vickers micro-hardness technique. A piezo-coefficient of 15 pC N−1was found along the (001) plane of the title crystals. The thermal stability and melting point were also investigated. In addition, density functional theory simulations were used to calculate the optimized molecular geometry and the UV–vis spectrum, and to determine the highest occupied molecular orbital/lowest unoccupied molecular orbital energy gap. The results show thatN-(4-methylbenzyl)benzamide is a potential candidate for multifunctional optical and piezoelectric crystals.

show abstract

Synthesis and devices characterization of pyrazolo[4,3-b] pyridine derivatives containing methoxy and hydroxy phenyl groups

El-Menyawy

Zedan

Nawar³

2019

Opt Quant Electron

View full text Add to dashboard Cite

Geometrical and crystal structures, optical absorption and device characterization of N-(5-{[antipyrinyl-hydrazono]-cyanomethyl}-[1,3,4]thiadiazol-2-yl)-benzamide

Cited by 8 publications

References 35 publications

Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode

Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode

An insight into the synthesis, crystal structure, geometrical modelling of crystal morphology, Hirshfeld surface analysis and characterization ofN-(4-methylbenzyl)benzamide single crystals

Synthesis and devices characterization of pyrazolo[4,3-b] pyridine derivatives containing methoxy and hydroxy phenyl groups

Contact Info

Product

Resources

About