Optical effects during rapid thermal diffusion

Noël, S.; Slaoui, A.; Müller, J. C.; Groh, Benjamin H.; Schindler, R.; Froeschle, B.; Theiler, T.

doi:10.1007/s11664-998-0090-7

Cited by 14 publications

(4 citation statements)

References 9 publications

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“…The results of the first set of experiments are similar to the results of Ref. 15. The diffusion profile of the furnace step dominates the overall doping profile.…”

Section: Discussionsupporting

confidence: 83%

“…Motivated by our earlier published work, Noel and coworkers have published a recent article dealing with the optical effects during rapid thermal diffusion. 15 The authors of Ref. 15 suggested that the diffusion enhancement was only due to the dopant oxide densification in the presence of UV radiation during the drive-in step of a two step diffusion process and not due to the lowering of activation energy affecting the diffusion kinetics as we had demonstrated in previous publications.…”

Section: Discussionmentioning

confidence: 76%

“…The data described in Ref. 15 uses the following sequence of diffusion steps: (i) the first involves diffusion at 840°C in a furnace for 2 h in an atmosphere of POCl 3 , (ii) after removal of the glass layer, the second diffusion step was carried out using RTP at a temperature of 900°C for 5 min, with and without the presence of UV photons. No appreciable difference in the doping profiles and junction depths were observed.…”

Section: Discussionmentioning

confidence: 99%

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A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing

Venkataraman

Singh

Parihar

et al. 1999

Journal of Elec Materi

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“…The results of the first set of experiments are similar to the results of Ref. 15. The diffusion profile of the furnace step dominates the overall doping profile.…”

Section: Discussionsupporting

confidence: 83%

Section: Discussionmentioning

confidence: 76%

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing

Venkataraman

Singh

Parihar

et al. 1999

Journal of Elec Materi

View full text Add to dashboard Cite

“…15 Further, studies of the solar cell process found that the presence of ultraviolet photons did not affect the kinetics of dopant diffusion in silicon but did affect the densification of the doped-glass surface film as well as the emissivity of the silicon surface. 16 In another study of the solar cell process, phosphorus was diffused from doped glass deposited on both sides of wafers that were annealed in a lamp-RTA system equipped with excimer ultraviolet lamps in the upper side of the process chamber. 17,18 No significant differences were obtained in the dopant activation on the two sides of the wafers, from which it was concluded that ultraviolet exposure is ineffective for photothermal enhancement.…”

Section: Introductionmentioning

confidence: 99%

Photothermal Activation of Shallow Dopants Implanted in Silicon

Fiory

Stevenson

Agarwal³

et al. 2007

Journal of Elec Materi

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Dopant impurities were implanted at high dose and low energy (10 15 cm -2 , 0.5-2.2 keV) into double-side polished 200 mm diameter silicon wafers and electrically activated to form p-n junctions by 10 s anneals at temperatures of 1,025, 1,050, and 1,075°C by optical heating with tungsten incandescent lamps. Activation was studied for P, As, B, and BF 2 species implanted on one wafer side and for P and BF 2 implanted on both sides of the wafer. Measurements included electrical sheet resistance (Rs) and oxide film thickness. A heavily boron-doped wafer, which is optically opaque, was used as a hot shield to prevent direct exposure to lamp radiation on the adjacent side of the test wafer. Two wafers with opposing orientations with respect to the shield wafer were annealed for comparison of exposure to, or shielding from, direct lamp illumination. Differences in sheet resistance for the two wafer orientations ranged from 4% to 60%. n-Type dopants implanted in p-type wafers yielded higher Rs when the implanted surface was exposed to the lamps, as though the effective temperature had been reduced. p-Type dopants implanted in ntype wafers yielded lower Rs when the implanted surface was exposed to the lamps, as though the effective temperature had been increased. Effective temperature differences larger than 5°C, which were observed for the P, B, and BF 2 implants, exceeded experimental uncertainty in temperature control.

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Intrinsic Defects: Diffusion

2009

Charged Semiconductor Defects

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Optical effects during rapid thermal diffusion

Cited by 14 publications

References 9 publications

A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing

A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing

Photothermal Activation of Shallow Dopants Implanted in Silicon

Intrinsic Defects: Diffusion

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