Optical detection of magnetic resonance in electron-irradiated GaN

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

“…The defects introduced in electron irradiation of GaN have been studied earlier with electrical and optical methods, [1][2][3] optical detection of electron paramagnetic resonance ͑ODEPR͒, [4][5][6][7] and positron annihilation spectroscopy 8 as well. However, only in the most recent studies 2,3,7 could the measurements be performed in samples with both low impurity content and low dislocation densities, [9][10][11] allowing more accurate observations of the isolated intrinsic point defects.…”

Spectroscopy of Proton Implanted GaN

“…9,10 Our proton implanted samples show only the S = ½ spectrum LE1 [Fig 4(b)]. Spectrum LE2, associated with the more sharply structured luminescence band, and the two ODEPR spectra attributed to displaced Ga atoms were not seen in our protonimplanted samples.…”

“…The implantation also produced a near infrared luminescence band centered at ~0.95 eV, very similar to a band reported previously that is produced by high-energy electron irradiation. 9,10,20 The near-infrared PL spectra seen for electron-irradiated and proton-implanted samples are compared in Fig. 5.…”

“…[4][5][6][7] Of particular interest here are recent studies of the interaction of hydrogen with native defects 8 and experimental results for the defects introduced in GaN by high-energy electron irradiation. 9,10 In this paper we report results for the defects introduced by the implantation of hydrogen into GaN. The defects created by the implantation that are decorated by H have been studied by vibrational spectroscopy.…”

“…PL and ODEPR spectra have been measured for the same H-implanted samples and compared with recent results obtained for GaN irradiated with 2.5 MeV electrons. 9,10 …”