Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures

Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs

“…As the first excited state of the TQDs overlaps with the ground state of the SQDs, the observed excitation resonance at ~1065 nm in the PLE spectrum could be a combined contribution of carriers from the first excited state of TQDs and from the ground state of SQDs to the TQD ground states. However, the observed excitation resonance in Figure 3a is much stronger than similar results reported from PLE measurements of single layers of QDs [18,24,25]. This leads to the conclusion that there is a significant transfer of carriers from the SQDs to the TQDs in our QD pair structure [19].…”

“…Such bilayer QD structures enable flexible manipulation of the quantum coupling between two layers of QDs, independently controlling the QD density, size, and uniformity. These advantages make the bilayer InAs/GaAs QD structures an interesting choice for QD device applications [16][17][18].…”

Phase and amplitude control of optical bistability in quantum dot molecules

“…Such a QD molecule can be fabricated using the self-assembled dot growth technology [12]. As a realistic example, the asymmetric QD molecules have been detected in double layer InAs/GaAs structures [15]. Figure. 1(a).…”

Impact of the incoherent pumping on the optical properties of a dielectric slab doped with quantum dot nanostructure

“…Such a QD molecule can be fabricated by using the self-assembled dot grown technology [33]. As a realistic example, the asymmetric QD molecules have been detected in double layer InAs/GaAs structures [41]. We consider a three-level quantum dot molecule system as shown in Fig.…”