Optical-damage-resistant impurities in lithium niobate

Volk, T. R.; Rubinina, N. M.; Stizza, S.

doi:10.1364/josab.11.001681

Cited by 228 publications

(106 citation statements)

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“…In the presence of light, however, the photoconductivity is governed by iron impurities in iron-doped LiNbO 3 . 24 The thermally activated ionic (and, similarly, the thermally activated electronic) conductivity obeys an Arrhenius-type dependence on the absolute temperature T:…”

Section: Experiments a General Remarks On Hologram Fixing And Ionic mentioning

confidence: 99%

Holographic storage dynamics in lithium niobate: theory and experiment

Yariv

Orlov

Rakuljic³

1996

J. Opt. Soc. Am. B

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We present a theoretical model that describes holographic ionic fixing and storage dynamics in photorefractive crystals. Holographic gratings that are based on charge redistribution inevitably decay because of ionic and electronic conduction. Relevant decay rates and transient hologram field expressions are derived. Ionic gratings are partially screened by trapped electrons on readout. The lifetimes of fixed ionic holograms are limited by the finite ionic conductivity at low (i.e., room) temperatures. Only under certain and restricted conditions can these decay times be acceptably long. A significant increase in fixed ionic hologram lifetime is realized in lithium niobate with a low hydrogen-impurity content. The residual ionic conductivity (decay-time constant) in these samples exhibits ϳ1.4-eV activation energy and is not due to protonic conduction. Fixed hologram lifetimes of ϳ2 years at room temperature in dehydrated lithium niobate crystals are projected.

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Section: Experiments a General Remarks On Hologram Fixing And Ionic mentioning

confidence: 99%

Holographic storage dynamics in lithium niobate: theory and experiment

Yariv

Orlov

Rakuljic³

1996

J. Opt. Soc. Am. B

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“…For designing experiments and for preliminary model calculations, the knowledge of the absorption coefficient and the refractive index of the material in the THz range are of key importance. Mg doping has an effect on various spectroscopic features of sLN, such as the UV absorption edge, 68,79 the IR absorption band, 68,91 and the PR effect (the latter is disadvantageous in the case of nonlinear applications). 48 In order to obtain information about the effect of Mg doping on THz absorption and refraction, the following measurements were performed.…”

Section: Absorption Refractive Index In the Far-ir (Thz) Rangementioning

confidence: 99%

Growth, defect structure, and THz application of stoichiometric lithium niobate

Lengyel

Péter

Kovács

et al. 2015

Applied Physics Reviews

104

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Owing to the extraordinary richness of its physical properties, congruent lithium niobate has attracted multidecade-long interest both for fundamental science and applications. The combination of ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as the strong photorefractive and photovoltaic effects offers a great potential for applications in modern optics. To provide powerful optical components in high energy laser applications, tailoring of key material parameters, especially stoichiometry, is required. This paper reviews the state of the art of growing large stoichiometric LiNbO 3 (sLN) crystals, in particular, the defect engineering of pure and doped sLN with emphasis on optical damage resistant (ODR) dopants (e.g., Mg, Zn, In, Sc, Hf, Zr, Sn). The discussion is focused on crystals grown by the high temperature top seeded solution growth (HTTSSG) technique using alkali oxide fluxing agents. Based on high-temperature phase equilibria studies of the Li 2 O-Nb 2 O 5 -X 2 O ternary systems (X ¼ Na, K, Rb, Cs), the impact of alkali homologue additives on the stoichiometry of the lithium niobate phase will be analyzed, together with a summary of the ultraviolet, infrared, and far-infrared absorption spectroscopic methods developed to characterize the composition of the crystals. It will be shown that using HTTSSG from K 2 O containing flux, crystals closest to the stoichiometric composition can be grown characterized by a UV-edge position of at about 302 nm and a single narrow hydroxyl band in the IR with a linewidth of less than 3 cm À1 at 300 K. The threshold concentrations for ODR dopants depend on crystal stoichiometry and the valence of the dopants; Raman spectra, hydroxyl vibration spectra, and Z-scan measurements prove to be useful to distinguish crystals below and above the photorefractive threshold. Crystals just above the threshold are preferred for most nonlinear optical applications apart holography and have the additional advantage to minimize the absorption even in the far-infrared (THz) range. The review also provides a discussion on the progress made in the characterization of non-stoichiometry related intrinsic and extrinsic defect structures in doped LN crystals, with emphasis on ODR-ion-doped and/or closely stoichiometric systems, based on both spectroscopic measurements and theoretical modelling, including the results of first principles quantum mechanical calculations on hydroxyl defects. It will also be shown that new perspective applications, e.g., the generation of high energy THz pulses with energies on the tens-of-mJ scale, are feasible with ODR-doped sLN crystals if optimal conditions, including the contact grating technique, are applied. V C 2015 AIP Publishing LLC.

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“…3 (e) Although the reason for the optical damage resistance has been a vexed problem, the following explanation is considered. According to the well-known scalar expression ∂∆n ≈ AkαI/σ [21], where A is the generalized electro-optical coefficient, k is the Glass constant, α is the optical absorption coefficient, σ=σ d +σ p (σ d σ p ) σ d is the dark conductivity, σ p is the photoconductivity, and I is the light intensity. With an increase of cationvacanay photoconductivity, the photorefraction decreases because of the increase in photoconductivity, whereas the photovoltaic current is almost unchanged.…”

Section: Resultsmentioning

confidence: 99%

Growth and optical damage resistance of Sc, Er Co-doped LiNbO3 crystals

Zhen

Li²,

et al. 2005

Cryst. Res. Technol.

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A series of Sc:Er:LiNbO 3 crystals have been grown by Czochralski method. Their ultraviolet-visible (UVVis) absorption spectra was measured and discussed to investigate their defect structure. The optical damage resistance of Sc:Er:LiNbO 3 crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of Sc 2 O 3 exceeds a threshold concentration. The optical damage resistance of Sc (3.0mol %):Er:LiNbO 3 is much higher than that of the Er:LiNbO 3 . The intrinsic and extrinsic defects were discussed to explain the enhance of the optical damage resistance in the Sc:Er:LiNbO 3 crystals.

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Optical-damage-resistant impurities in lithium niobate

Cited by 228 publications

References 0 publications

Holographic storage dynamics in lithium niobate: theory and experiment

Holographic storage dynamics in lithium niobate: theory and experiment

Growth, defect structure, and THz application of stoichiometric lithium niobate

Growth and optical damage resistance of Sc, Er Co-doped LiNbO3 crystals

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