Optical critical points of thin-film<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>Ge</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>y</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Sn</mml:mi><mml:mi>y</mml:mi></mml:msub></mml:mrow></mml:math>alloys: A comparative<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>Ge</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>y</mml:m

D'Costa, V. R.; Cook, Charles F.; Birdwell, A. Glen; Littler, C. L.; Canonico, M.; Zollner, Stefan; Kouvetakis, John; Menéndez, José

doi:10.1103/physrevb.73.125207

Cited by 314 publications

(213 citation statements)

References 91 publications

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“…27 The obtained direct gap bowing parameter and the spin-orbit splitting bowing parameter of the Ge 1−x Sn x alloys are 1.936 and 0.405, respectively, in accordance with Ref. 13. The calculated direct gap transition composition for unstrained Ge 1−x Sn x alloy is around 0.062, which is consistent with the results reported in Refs.…”

Section: Calculation Methodssupporting

confidence: 90%

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Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge1−xSnx alloys

et al. 2016

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Direct gap Ge1−xSnx alloys under [100] and [110] uniaxial strain are comprehensively investigated by theoretical calculations using the nonlocal empirical pseudopotential method (EPM). It is shown that [100] uniaxial tensile strain aids indirect-to-direct gap transition in Ge1−xSnx alloys. The Γ electron effective mass along the optimal direction under [110] uniaxial strain is smaller than those under [100] uniaxial strain and (001) biaxial strain. Additionally, the direct tunneling gap is smallest along the strain-perpendicular direction under [110] uniaxial tensile strain, resulting in a maximum direct band-to-band tunneling generation rate. An optimal [110] uniaxial tensile strain is favorable for high-performance direct gap Ge1−xSnx electronic devices.

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Section: Calculation Methodssupporting

confidence: 90%

“…[12][13][14][15][16][17] Some experimental demonstrations of Ge 1−x Sn x MOSFETs and TFETs have also been reported, confirming their superior electronic carrier properties. [18][19][20][21] The most commonly reported Ge 1−x Sn x alloys at present are grown on Ge or Si substrates.…”

Section: Introductionmentioning

confidence: 71%

Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge1−xSnx alloys

et al. 2016

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“…While the SiGe and GeSn bowing parameters are known, 11,12 the experimental determination of b SiSn values is more challenging owing to the large lattice mismatch between silicon and tin which hinders the growth of high quality SiSn alloys. 13 To date, no systematic experimental study on the bowing parameter of SiSn binary alloys has been reported.…”

mentioning

confidence: 99%

“…For the band-gaps of the constituent materials Si, Ge, and Sn as well as the SiGe bowing parameter, we followed D'Costa et al and used the values 4:1 eV; 0:8 eV, À0:41 eV, and 0:21 eV, respectively. 11,14 For the GeSn bowing parameters, several values can be found in the literature varying between 1:94 eV and 2:61 eV. 11,31 Here, we use the value of 2:46 eV.…”

mentioning

confidence: 99%

“…11,14 For the GeSn bowing parameters, several values can be found in the literature varying between 1:94 eV and 2:61 eV. 11,31 Here, we use the value of 2:46 eV. 12 However, as will be shown in the following, the bowing behavior of the GeSiSn band-gap is dominated by the SiSn bowing parameter and variations of the GeSn bowing parameter, therefore, have only a minor effect.…”

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confidence: 99%

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Compositional dependence of the band-gap of Ge1−x−ySixSny alloys

Wendav

Fischer

Montanari

et al. 2016

Applied Physics Letters

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The group-IV semiconductor alloy Ge1−x−ySixSny has recently attracted great interest due to its prospective potential for use in optoelectronics, electronics, and photovoltaics. Here, we investigate molecular beam epitaxy grown Ge1−x−ySixSny alloys lattice-matched to Ge with large Si and Sn concentrations of up to 42% and 10%, respectively. The samples were characterized in detail by Rutherford backscattering/channeling spectroscopy for composition and crystal quality, x-ray diffraction for strain determination, and photoluminescence spectroscopy for the assessment of band-gap energies. Moreover, the experimentally extracted material parameters were used to determine the SiSn bowing and to make predictions about the optical transition energy.

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Optical Properties

2009

Properties of Semiconductor Alloys

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The complex dielectric function «ðEÞ ¼ « 1 ðEÞ þ i« 2 ðEÞ ð 10:1Þcan be used to describe the optical properties of the medium at all photon energiesThe complex refractive index n Ã (E) can also be given bywhere n(E) is the ordinary (real) refractive index and k(E) is the extinction coefficient. From Equation (10.2), we obtain Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao Adachi

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Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−y

Cited by 314 publications

References 91 publications

Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge1−xSnx alloys

Effects of uniaxial strain on electron effective mass and tunneling capability of direct gap Ge1−xSnx alloys

Compositional dependence of the band-gap of Ge1−x−ySixSny alloys

Optical Properties

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