Optical coupling of two diode lasers with variable coupling coefficient

Salathé, R. P.; Voumard, C.; Weber, H. P.

doi:10.1002/pssa.2210230240

Cited by 9 publications

(2 citation statements)

References 11 publications

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“…Experiments on Q-switching [1,2] and self modulation [3,4] as well as on mode selection [5,6] and on mode synchronization [7][8][9] have confirmed these properties. Compound systems are of interest because they can be used to influence the dynamic and spectral behaviour of the laser emission.…”

Section: Introductionmentioning

confidence: 59%

Rate equation approach for diode lasers

1974

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The light output powers of a semiconductor laser diode within an external cavity and of two optical coupled diodes are evaluated as a function of the system parameters (drive currents and coupling coefficient). The calculations are based on a rate equation approach. A power law dependence between optical gain and electron density has been assumed and spontaneous emission into the amplified light field is taken into account in this approach. Analytical approximations are evaluated for the photon number within the diode cavity. With the exception of a small region near threshold there is good agreement between approximations and numerically calculated photon numbers. The theoretical results are compared with experimental data and good quantitative agreement is found in both cases, the diode in the external cavity and the optical coupled diodes.

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Section: Introductionmentioning

confidence: 59%

Rate equation approach for diode lasers

1974

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“…Various models have been used to describe transient phenomena in semiconductor lasers [2,5] and to evaluate in steady state conditions the photon number in diode laser cavities [6] and in compound systems, such as a diode within an external resonator [7,8], double diodes [8][9][10][11] and optical coupled diodes [12]. Various models have been used to describe transient phenomena in semiconductor lasers [2,5] and to evaluate in steady state conditions the photon number in diode laser cavities [6] and in compound systems, such as a diode within an external resonator [7,8], double diodes [8][9][10][11] and optical coupled diodes [12].…”

Section: Introductionmentioning

confidence: 99%

Rate equation approach for diode lasers

1974

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The light output and the electron density within the active layer of a semiconductor laser have been calculated from the steady state solution of a rate equation approach. The assumed rate equation model takes into account the spontaneous emission into the lasing modes. Simple analytical approximation formulae have been found under the assumption of a power-law dependence between optical gain g and electron density n (g oc nl). The approximations are compared with numerical results from the rate equations. With the exception of a small region near the lasing threshold good agreement has been found.The theoretical results are compared with experimentally measured light outputs from single and double heterostructure lasers. From the comparison below threshold the power law exponent / may be evaluated. The comparison at threshold suggests that the spontaneous emission term decreases at threshold. This decrease is in agreement with experimentally measured changes of the emission bandwidth at threshold.

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