Optical control of W-band impatt oscillators

Singleton, J. F.; Seeds, A.J.; Brunt, S.

doi:10.1049/ip-j.1986.0060

Cited by 3 publications

(2 citation statements)

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“…The tuning of IMPATT devices by conventional approaches is difficult, as it involves a critical design of a third terminal and its associated circuit for this purpose [1]. Earlier reports indicate [2] that the optimum frequency may undergo changes when the IMPATT diode is subjected to optical radiation, and thus by changing the intensity of incident optical radiation within the depletion zone of the diode, the oscillating frequency of IMPATT oscillator can be tuned.…”

Section: Introductionmentioning

confidence: 99%

“…However, the operating frequencies over the wide bandwidth are usually with relatively large cross-polarization radiation in the H-plane pattern, especially for higher operating frequencies. This is probably due to some of the unwanted higher-order modes excited to increase the polarization impurity [2,3]. To solve the problem, several related designs with an additional feed of equal amplitude and a 180°phase shift to excite single or dual rectangular patch antennas have been presented [4,5].…”

Section: Introductionmentioning

confidence: 99%

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Effect of optical radiation on millimeter‐wave characteristics and avalanche noise generation in double‐drift impatt diodes based on opto‐sensitive semiconductors

Dash¹,

Pati

2002

Micro & Optical Tech Letters

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RF properties and avalanche noise generation in opto-sensitive GaAs, InP, GaInAs, and GaInAsP double-drift INTRODUCTIONIn recent years, the optical control of microwave properties has become an active field of research due to its widespread application in modern communication systems. The tuning of IMPATT devices by conventional approaches is difficult, as it involves a critical design of a third terminal and its associated circuit for this purpose [1]. Earlier reports indicate [2] that the optimum frequency may undergo changes when the IMPATT diode is subjected to optical radiation, and thus by changing the intensity of incident optical radiation within the depletion zone of the diode, the oscillating frequency of IMPATT oscillator can be tuned.The mechanism of optical control in an IMPATT diode is realized by illuminating the diode through external ionizing radiation. The optical illumination varies the level of reverse saturation current, which alters the avalanche buildup of charge carriers and hence causes a further phase difference between the RF voltage and RF current. Without optical illumination, the saturation current entering into the depletion zone of the p-n junction is solely due to the thermally generated electron-hole pairs, which are subjected to avalanche multiplication in the high-field region of the p-n junction. The illumination of the IMPATT diode by photons having a photon energy greater than the band-gap energy of the semiconductor results in the generation of additional electron-hole pairs. The optically generated electron-hole pairs together with the thermally generated electron-hole pairs increase the level of the saturation current. The multiplication factor, which is an important parameter of the IMPATT diode operation, is directly related to the total saturation current. The multiplication factor (M) of the IMPATT diode, which is defined as the ratio of the total terminal current coming out (due to electron or hole) at the end of the p-n junction to the (electron or hole) saturation current entering the junction is taken to be infinite (10 6 for practical purposes) under normal IMPATT operating conditions. In the presence of optical illumination, the saturation current increases by orders of magnitude and thereby the multiplication factor decreases. For a sufficient proportion of optical component of generated saturation current, the multiplication factor becomes finite. This decrease in the carrier multiplication factor affects the normal characteristics of an IMPATT diode.The random process of impact ionization in a reverse bias p-n junction is responsible for the generation of avalanche noise in IMPATT diodes. Experimental and theoretical research work in the field of avalanche noise generation in IMPATTs has been carried out by several groups of workers in different parts of the world [3][4][5][6][7]. Their work on the estimation of avalanche noise in IMPATTs mostly considers integrated noise characteristics in solid-state RF oscillators and amplifiers. The intensity...

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of optical radiation on millimeter‐wave characteristics and avalanche noise generation in double‐drift impatt diodes based on opto‐sensitive semiconductors

Dash¹,

Pati

2002

Micro & Optical Tech Letters

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Effect of electron- and hole-dominant photocurrent on the millimetre wave properties of an indium phosphide IMPATT diode at a 94 GHz window under optical illumination

Banerjee¹,

Mukherjee²

1994

Semicond. Sci. Technol.

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The effect of photogenerated predominant electron or hole components of the leakage current on the admittance and negative resistance properties of a 94 GHz p+nn+ indium phosphide IMPATT diode under optical illumination is presented in this paper. A computer modelling and simulation technique has been used to study the above effect. The results show that the photogenerated leakage current dominated by holes is more important than that dominated by electrons in modulating the millimetre wave properties of the device and shifting its oscillation frequency. The magnitudes of electron or hole ionization rates in the semiconductor have been found to be correlated with the above effect.

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Optical control and injection locking of monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MODFET oscillators

Yang

Bhattacharya

Lai³

et al. 1995

IEEE Trans. Electron Devices

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Optical control of W-band impatt oscillators

Cited by 3 publications

References 10 publications

Effect of optical radiation on millimeter‐wave characteristics and avalanche noise generation in double‐drift impatt diodes based on opto‐sensitive semiconductors

Effect of optical radiation on millimeter‐wave characteristics and avalanche noise generation in double‐drift impatt diodes based on opto‐sensitive semiconductors

Effect of electron- and hole-dominant photocurrent on the millimetre wave properties of an indium phosphide IMPATT diode at a 94 GHz window under optical illumination

Optical control and injection locking of monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MODFET oscillators

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