Optical control of the exciton charge states of single quantum dots via impurity levels

Exciton and multi-exciton structures in GaAs quantum dots studied by single-photon correlation spectroscopy

“…4(d) and (f)). These results confirmed the potential of GaAs/ AlGaAs QDs as on-demand, single-photon or photon-pair sources [11][12][13]. As a result of the correlation measurements, we found that the X, CX, and XX emission lines originated from the exciton, charged exciton, and biexciton states, respectively.…”

Site‐controlled InGaAs quantum dots grown on a GaAs multi‐faceted microstructure for single photon emissions

“…4. The measured g (2) (τ) shows a symmetric dip at τ = 0 with a depth of g (2) (0) = 0.36, which is a clear signature of photon antibunching [6,9,10]. The non-zero g (2) (0) is caused by background PL and timing resolution of detection system [6,9,10].…”

“…The measured g (2) (τ) shows a symmetric dip at τ = 0 with a depth of g (2) (0) = 0.36, which is a clear signature of photon antibunching [6,9,10]. The non-zero g (2) (0) is caused by background PL and timing resolution of detection system [6,9,10]. Recently, the authors demonstrated that reducing the apex plane area not only limit the number of QDs on apex plane but also improve the extraction efficiency of single photons via increasing collective solid angle of QD emissions by side wall facets [10].…”

“…Figure 4 shows the µPL spectra of site-controlled QDs at various excitation powers. Two emission lines at 1.2796 eV and 1.2805 eV are identified as the charged exciton and exciton emissions, respectively, and the additional lines appear at high excitation powers are originated from biexciton and multi-exciton emissions [6,9]. The autocorrelation measurement for charged exciton line is used to demonstrate single photon emissions from site-controlled QDs, which is plotted in inset of Fig.…”

Magnetic Field Effect on the Excitation Spectrum of a Neutral Exciton in a Single Quantum Dot

“…At higher excitation powers Fig. 1b, the X + line disappears from the spectrum -because of: the neutralization process of acceptors (the nominally undoped GaAs-based structures exhibit a residual p-type background doping) [12] and the asymmetry of the capture and the lifetime of electrons (1066) and holes (it is important in the non-resonant excitation regime) [11]. Moreover, an additional line, related to the doubly negatively charged exciton (X 2− ), appears on the low-energy side of the X − line [7].…”