Optical constants and dispersion energy parameters of NiO thin films prepared by radio frequency magnetron sputtering technique

Usha, K.; Sivakumar, R.; Sanjeeviraja, C.

doi:10.1063/1.4821966

Cited by 180 publications

(50 citation statements)

References 49 publications

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“…It reveals that the optical band gap of the MoO 3 film decreases with the increase of the annealing temperature that might be due to the formation of oxygen ion vacancies and the improvement of crystallinity in the film. 11 This presumption is consistent with our XRD finding. The optical band gap value …”

Section: Optical Propertiessupporting

confidence: 83%

“…The film annealed at 400 C exhibits only 65% of transparency at 575 nm due to the free carrier absorption and scattering of light by formation of micro crystallites. 11 The optical behavior of the film annealed at 350 C is different from the others indicating the phase transformation around 300 C which causes more absorption by charge carriers. The higher transmittance in the higher wavelength region indicates the decrement in optical band gap (E g ) with the increase of the annealing temperatures.…”

Section: Optical Propertiesmentioning

confidence: 99%

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The dielectric studies on sol–gel routed molybdenum oxide thin film

Arasu¹,

Williams²

2017

J. Adv. Dielect.

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The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide (MoO 3 Þ thin film has been investigated. Prepared films were annealed at temperatures 250 C, 350 C and 400 C. The phase transformation from amorphous to -orthorhombic phase with preferential orientation (0 2 2) has been found by XRD for the film annealed above 250 C. The vibration modes of -orthorhombic MoO 3 have been examined by Raman spectrum. The predominant Raman's band of -orthorhombic MoO 3 thin film has been found at the frequency range 1000-600 cm À1 . Using the UV-Vis spectrum, the band gap of the film is found to be 3.3-3.8 eV. The surface morphology of the MoO 3 films has been examined by scanning electron microscope. The AC conductivity measurement of the MoO 3 film has been carried out in the frequency range 10-10 6 Hz. The frequency dependence of the impedance has been plotted in the complex plane. The variation of the capacitance and dielectric constant of MoO 3 film with respect to temperature and frequency has been analyzed. Tunability of capacitance and figure of merit of the film are also determined.

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Section: Optical Propertiessupporting

confidence: 83%

Section: Optical Propertiesmentioning

confidence: 99%

The dielectric studies on sol–gel routed molybdenum oxide thin film

Arasu¹,

Williams²

2017

J. Adv. Dielect.

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“…It is found that the increase in rf power leads to a decrease in optical band gaps from 3.53 to 3.45 eV. WenTing et al [25] and Usha et al [26] were obtained decreasing band gap with increasing rf power. Suzuki et al [27] reported the band gaps of 4.1-2.6 eV for CeO 2 thin films.…”

Section: Optical Studiesmentioning

confidence: 92%

Effect of rf power on the properties of magnetron sputtered CeO2 thin films

Murugan

Vijayaprasath

Mahalingam

et al. 2015

J Mater Sci: Mater Electron

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Cerium oxide (CeO 2 ) thin films were prepared by rf magnetron sputtering (PVD) technique onto glass substrates at a pressure of 3 9 10 -4 mbar of Ar ? atmosphere. The thickness of deposited CeO 2 films ranges from 380 to 590 nm. X-ray diffraction studies on the films showed that the films are polycrystalline in nature. The crystallite size (D), dislocation density (d) and micro-strain (e) were evaluated from XRD patterns. The obtained micro-strain and dislocation density of the films were found to be *10 -3 and *10 16 lines/m 2 respectively, along with a marginal increase in crystallite size from *6 to *9 nm. The experimental diffraction values of the films agreed with the standard values. The optical properties of cerium oxide films were studied in the wavelength range 325-900 nm. Optical absorption, extinction coefficients, refractive index and optical conductivity were evaluated from optical measurements. The films are found to be highly transparent in visible region and exhibits low reflectance in the ultraviolet region. The optical band gap of the films was found to decrease from 3.53 to 3.45 eV, with the increase of film thickness. The defects were found to increase with the increase of rf power. Emission bands like UV, weak blue, blue, blue-green and green bands were observed from PL spectra of CeO 2 thin films. Raman active mode (F 2g ) of CeO 2 thin films was observed at 466 cm -1 and films deposited at higher rf power show increased line width as well as peak intensity in Raman spectra. Rf power induced formations of flower like morphology were observed in SEM images. The surface roughness of CeO 2 thin films was increased from 2.9 to 7.7 nm with the increase of rf power as ascertained from AFM images and the results are discussed.

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“…[2,4,6,7]. A variety of NiO film deposition techniques has been investigated including sputtering, pulsed laser deposition, reactive evaporation, spray pyrolysis, thermal deposition, and metal-organic chemical vapor deposition (MOCVD) [1,4,8,[9][10][11]. As it has been reported [12] NiO films obtained are predominantly amorphous or randomly oriented polycrystalline.…”

Section: Introductionmentioning

confidence: 98%

“…Nickel oxide (NiO) films have attracted considerable interest of researchers due to their semitransparent, thermoelectric, and catalytic properties [1]. NiO is considered to be a model semiconductor with p-type conductivity as a result of its wide band-gap energy range from 3.6 to 4.0 eV [2].…”

Section: Introductionmentioning

confidence: 99%

Kinetic study of MOCVD of NiO films from bis‐(ethylcyclopentadienyl) nickel

Kondrateva

Mishin

Шахмин

et al. 2015

Phys. Status Solidi C

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NiO films were grown by metal‐organic chemical vapor deposition (MOCVD) using bis‐(ethylcyclopentadienyl) nickel [(EtCp)2Ni] and oxygen or ozone as precursors. The kinetic regularities of MOCVD processes were experimentally studied in the deposition temperature range 600‐820 K for the reaction systems: (EtCp)2Ni–O2–Ar and (EtCp)2Ni–O3–O2–Ar. The results obtained show that the deposition processes in the temperature range 600‐700 K are controlled by kinetics and the value of activation energy of the processes is 80±5 kJ·mol−1 in both cases. The growth process in the temperature region 700–840 K is controlled by mass transport. An introduction of ozone in the reaction gas phase led to nearly twofold decrease of deposition rate probably because of homogeneous reactions with (EtCp)2Ni. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Optical constants and dispersion energy parameters of NiO thin films prepared by radio frequency magnetron sputtering technique

Cited by 180 publications

References 49 publications

The dielectric studies on sol–gel routed molybdenum oxide thin film

The dielectric studies on sol–gel routed molybdenum oxide thin film

Effect of rf power on the properties of magnetron sputtered CeO2 thin films

Kinetic study of MOCVD of NiO films from bis‐(ethylcyclopentadienyl) nickel

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