Optical, Compositional and Electrical Properties of Transparent MgO Thin Film for ReRAM Devices

Abstract

The bipolar switching phenomenon is observed in the MgO-based memory cell having a metal-oxide-metal (W/MgO/Cu) structure. The MgO thin film offers a high transmittance of 86 - 88% for visible light, measured by UV-Visible spectroscopy. An optical bandgap of 4.2 eV is estimated from Tauc’s plot calculation from the absorption spectra of MgO thin film. In addition, the XPS scan on the O 1s and Mg 2p peaks reveals the types of chemical elements in the rf sputtered MgO thin film. The Mg 2p peak at 49.36 eV suggests the oxidization of Mg, and two peaks at 529.5 eV and 531.6 eV in the O 1s core level indicate the presence of lattice and non-lattice oxygen, respectively. Non-lattice oxygen is responsible for the resistive switching in oxide thin films, confirmed by electrical characterization. The I-V characteristic from the electrical measurement shows the SET and RESET transitions at 5 V and –5 V, respectively. Moreover, the experimental results provide information about Ohmic conduction in low and high resistive states. This work proposes MgO as a promising material for applications in next-generation non-volatile data storage applications.

Analysis of Blackening Reaction of Zn-Mg-Al Alloy-Coated Steel Prepared by Water Vapor Treatment

“…Utilizing the absorbance data, the calculated bandgaps for Bare and Bare ST were found to be approximately 4.2 eV and 2.9 eV, respectively, as illustrated in Figure 13. The optical bandgap energy of Bare, estimated at 4.2 eV, corresponds to the optical bandgap energy of MgO [30]. This led to the conjecture that MgO was naturally formed in small quantities.…”

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

“…Although the memristor-based synaptic device array can lead to faster parallel data processing using VMM, further research is required to minimize its power consumption. However, ReRAM has been studied for memory application [ 16 , 29 ], research on the device operation mechanism [ 29 , 30 , 31 ], and research on ReRAMs composed of materials that are not CMOS-compatible [ 32 , 33 ]. Thus, in this study, a memristor-based 2T synaptic device with a multilayer structure was proposed to reduce the operating power while maintaining high-density integration.…”

Highly Transparent and Stable Flexible Electrodes Based on MgO/AgNW Nanocomposites for Transparent Heating Applications

“…[21] This opens up a wide variety of possibilities for its use since it has a high optical bandgap (4-6 eV) allowing for a higher transparency. [22][23][24] MgO has been developed as a thin film using different processes such as spray, [25] sol-gel, [26] sputtering, [27] and chemical vapor deposition [28] techniques. In addition, ALD has been widely used for the growth of MgO thin films since the 1990s due to its precise growth control of conformal and uniform thin films as a result of the selflimiting, surface, and sequential reactions.…”