Optical characterization of PLD grown nitrogen-doped TiO2 thin films

Farkas, Balázs; Budai, Judit; Kabalcı, İdris; Heszler, Péter; Geretovszky, Zsolt

doi:10.1016/j.apsusc.2007.11.034

Cited by 23 publications

(9 citation statements)

References 29 publications

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“…The absorption edges shift toward longer wavelengths from 300 nm to 350 nm with the increase of the substrate temperature, indicating a decrease in the band gap of the films, which may due to the N composition increase with the increasing temperature. This is different from the results suggested by Farkas et al [47]. Another reason is the grain size increases with increasing temperature, resulting to weak quantum size effects causing the red-shift of the absorption edge [48].…”

Section: Resultscontrasting

confidence: 87%

“…X-ray photoelectron spectra measurement should be performed to detect the state and component of N element in the films. The N element is usually formed as TiO 2−x N x in films prepared by PLD method [42,43,47]. Figure 2 shows the AFM images of N-doped TiO 2 films prepared at room temperature, 200 • C, and 400 • C. The grain sizes are 18.5, 19.2, and 28.1 nm, and their root mean square (rms) of roughness is 3.32, 3.96, and 6.73 nm, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Doped Titanium Dioxide Films Prepared by Pulsed Laser Deposition Method

Tang

Lin

et al. 2012

International Journal of Photoenergy

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TiO2was intensively researched especially for photocatalystic applications. The nitrogen-doped TiO2films prepared by pulsed laser deposition (PLD) method were reviewed, and some recent new experimental results were also presented in this paper. A new optical transmission method for evaluating the photocatalystic activity was presented. The main results are (1) PLD method is versatile for preparing oxide material or complex component films with excellent controllability and high reproducibility. (2) Anatase nitrogen-doped TiO2films were prepared at room temperature, 200°C, and 400°C by PLD method using novel ceramic target of mixture of TiN and TiO2. UV/Vis spectra, AFM, Raman spectra, and photocatalystic activity for decomposition of methyl orange (MO) tests showed that visible light response was improved at higher temperature. (3) The automatic, continuous optical transmission autorecorder method is suitable for detecting the photodecomposition dynamic process of organic compound.

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Section: Resultscontrasting

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Doped Titanium Dioxide Films Prepared by Pulsed Laser Deposition Method

Tang

Lin

et al. 2012

International Journal of Photoenergy

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“…The experimental setup has been previously reported [23] and thus only a brief recapitulation is provided here. A KrF excimer laser (λ = 248 nm, τ = 15 ns) was used to ablate Ti targets (99.6% purity).…”

Section: Methodsmentioning

confidence: 99%

“…spray pyrolysis [15], sol-gel method [16], atmospheric pressure chemical vapor deposition [17], ion-assisted electron beam evaporation [18], atomic layer deposition [19] and sputtering [20,21]. The synthesis of these films by pulsed laser deposition (PLD) was also studied by several groups in the last decade [22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39]. Nitrogen containing titanium-oxide films can easily be made by PLD via varying the experimental conditions, most importantly by ablating different targets (Ti [22][23][24], TiO [24], TiO 2 [24][25][26][27][28][29][30][31][32][33], TiN [24,34], pre-mixed (TiO 2 + TiN) [35,36] and TiNO [37]) in a variety of atmospheres (N 2 [25][26]<...>…”

Section: N-doped Tio 2 Thin Films Have Been Prepared By Various Deposmentioning

confidence: 99%

Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide

Farkas¹,

Heszler²,

Budai³

et al. 2018

Applied Surface Science

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N-doped TiO 2 thin films were prepared using pulsed laser deposition by ablating metallic Ti target with pulses of 248 nm wavelength, at 330 ºC substrate temperature in reactive atmospheres of N 2 /O 2 gas mixtures. These films were characterized by spectroscopic ellipsometry, X-ray photoelectron spectroscopy and X-ray diffraction. Optical properties are presented as a function of the N 2 content in the processing gas mixture and correlated to nitrogen incorporation into the deposited layers. In case of extinction coefficient, refractive index and optical band gap values a monotonically increasing tendency, a maximum and a linearly decreasing slope can be observed with increasing N concentration, respectively. It is also shown that the amount of substitutional N can be increased up to 7.7 at.%, but the high dopant concentration inhibits the crystallization of the samples. No peaks of crystalline titanium-nitride were detected despite the large amount of substitutionally incorporated nitrogen.

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“…Various deposition techniques, e.g. pulsed laser deposition (PLD) [15][16][17], sol-gel methods [18][19][20], ion-assisted electron beam evaporation [21,22], magnetron sputtering [10,[23][24][25][26][27][28][29][30][31][32][33][34] have been employed to prepare TiO x N y thin films. Owing to its numerous advantages, magnetron sputtering deposition is a well established method for coating which has been already extended to the industry.…”

Section: Introductionmentioning

confidence: 99%

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Straňák¹,

Quaas²,

Bogdanowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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To cite this version:Vitezslav Stranak, Marion Quaas, Robert Bogdanowicz, Hartmut Steffen, Harm Wulff, et al.. Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (28) AbstractThe paper is focused on a study of formation of TiO x N y thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O 2 and N 2 . The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating potential and thermally stabilized at room temperature during deposition process. Post-deposition thermal annealing was not employed. The chemical composition from XPS diagnostic reveals formation of TiO x N y structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N elements incorporation into the Ti-O lattice. Decrease of band-gap to values Eg ∼ 1.6 eV in TiOxNy thin film is attributed to formed Ti-N bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar + , Ti + , Ti) is presented together with peak discharge current.

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Optical characterization of PLD grown nitrogen-doped TiO2 thin films

Cited by 23 publications

References 29 publications

Doped Titanium Dioxide Films Prepared by Pulsed Laser Deposition Method

Doped Titanium Dioxide Films Prepared by Pulsed Laser Deposition Method

Optical, compositional and structural properties of pulsed laser deposited nitrogen-doped Titanium-dioxide

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

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