Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition

Snure, Michael; Paduano, Qing; Hamilton, Merle D; Shoaf, Jodie; Mann, J. Matthew

doi:10.1016/j.tsf.2014.09.065

Cited by 41 publications

(37 citation statements)

References 31 publications

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“…Similar upshifted Raman scattering spectra with larger FWHM values were seen in nanocrystalline hBN films grown on sapphire by other groups. 23,24 L a of the hBN films can be calculated using C 1=2 ¼ 141:7ðL a Þ À1 þ 8:7, where L a is in nm and C 1/2 is the FWHM of the Raman peak in cm À1 . 22 The crystallite size was estimated as $9 nm for the hBN films grown on (111) Si at 1350 C.…”

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confidence: 99%

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Ahmed

Dahal

Weltz

et al. 2016

Applied Physics Letters

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Hexagonal boron nitride (hBN) growth was carried out on (111) Si substrates at a temperature of 1350 C using a cold wall chemical vapor deposition system. The hBN phase of the deposited films was identified by the characteristic Raman peak at 1370 cm À1 with a full width at half maximum of 25 cm À1 , corresponding to the in-plane stretch of B and N atoms. Chemical bonding states and composition of the hBN films were analyzed by X-ray photoelectron spectroscopy; the extracted B/ N ratio was 1.03:1, which is 1:1 within the experimental error. The fabricated metal-hBN-metal devices demonstrate a strong deep UV (DUV) response. Further, the hBN growth on the vertical (111) surfaces of parallel trenches fabricated in (110) Si was explored to achieve a thermal neutron detector. These results demonstrate that hBN-based detectors represent a promising approach towards the development of DUV photodetectors and efficient solid-state thermal neutron detectors.

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confidence: 99%

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Ahmed

Dahal

Weltz

et al. 2016

Applied Physics Letters

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“…[10][11][12] Important progress in the MOCVD growth of uniform BN lms was achieved when it was demonstrated that the growth mode could be changed from 3D nucleation to 2D self-terminated nucleation by an increase in the V/III ratio and the use of high reactor pressure. [13][14][15][16] The self-terminated growth mode with high reactor pressure resulted in atomically smooth 5-6 monolayer thick BN lms. It was also found that substrate nitridation promotes self-terminating growth leading to atomically smooth lms.…”

Section: Introductionmentioning

confidence: 99%

Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

Michałowski

Caban

Baranowski

2019

J. Anal. At. Spectrom.

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“…However, the h-BN film thickness in these cases was limited to a few monolayers, which is insufficient to support carrier transport in device applications. Additionally, growth of h-BN layers on sapphire and silicon substrates has also been demonstrated [20][21][22]. Much of the recent interest in h-BN was stimulated by the report of growth of a thick h-BN film on an AlGaN layer by metal organic chemical vapor deposition (MOCVD) using a buffer layer [23].…”

Section: Introductionmentioning

confidence: 99%

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

2019

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Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

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Optical characterization of nanocrystalline boron nitride thin films grown by atomic layer deposition

Cited by 41 publications

References 31 publications

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection

Secondary ion mass spectrometry investigation of carbon grain formation in boron nitride epitaxial layers with atomic depth resolution

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

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