Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1−xNx alloys using spectroscopic ellipsometry

Matsumoto, Shigeyuki; Yaguchi, Hiroyuki; Kashiwase, Sakiko; Hashimoto, Toru; Yoshida, Sadafumi; Aoki, D.; Onabe, Kentaro

doi:10.1016/s0022-0248(00)00748-x

Cited by 10 publications

(5 citation statements)

References 12 publications

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“…5, indicating a significant band gap bowing effect similar to that predicted in related systems [20][21][22][23]. Our calculated GGA band gaps for the FIG.…”

supporting

confidence: 77%

Low-Temperature Epitaxial Growth of the Quaternary Wide Band Gap Semiconductor SiCAlN

et al. 2002

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Two compounds SiC and AlN, normally insoluble in each other below approximately 2000 degrees C, are synthesized as a single-phase solid-solution thin film by molecular beam epitaxy at 750 degrees C. The growth of epitaxial SiCAlN films with hexagonal structure takes place on 6H-SiC(0001) substrates. Two structural models for the hexagonal SiCAlN films are constructed based on first-principles total-energy density functional theory calculations, each showing agreement with the experimental microstructures observed in cross-sectional transmission electron microscopy images. The predicted fundamental band gap is 3.2 eV for the stoichiometric SiCAlN film.

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“…5, indicating a significant band gap bowing effect similar to that predicted in related systems [20][21][22][23]. Our calculated GGA band gaps for the FIG.…”

supporting

confidence: 77%

Low-Temperature Epitaxial Growth of the Quaternary Wide Band Gap Semiconductor SiCAlN

et al. 2002

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“…The main difference is that the features due to spin-orbit interaction appear, as the split-off energies for GaAs are much larger than the splitting for GaP, although the features due to Δ 0 are not marked, as they are weak compared to those due to Δ 1 . The trends in the calculated 𝜀 2 for GaAsN also agree with reported experiments 21,22 . However, it is seen, from both experimental and theoretical results, that there is absorption higher than 1 × 10 4 cm −1 well below 2.26 eV in dilute-N GaPN (due to 𝐸 0− ), and that the absorption rises to more than 1 × 10 5 cm −1 beyond 2.76 eV (due to 𝐸 0+ and 𝐸 1− ).…”

Section: 𝒔𝒑 𝟑 𝒅 𝟓 𝒔 * 𝒔 𝑵 Models For Dilute-n Gapn and Gaasnsupporting

confidence: 89%

“…The optical functions calculated from our TB parameterization show excellent agreement with the experimental data in terms of the absorption edge, the 𝐸 1 and 𝐸 2 peak positions, and the spin-orbit interaction peak positions for both III-V materials, while experimental peak widths are somewhat broader as we did not include lifetime broadening or indirect transitions. 22,60,61,64 , this work (solid blue curves), and other calculations (broken curves) [57][58][59]65 .…”

Section: Properties Of Gap and Gaasmentioning

confidence: 54%

“…For modeling dilute-N GaPAsN alloys for different applications, it is desirable to generate their optical response functions over a large photon energy range for arbitrary compositions. There are a few reports on the experimentally measured absorption and dielectric functions for a small sample of the entire quaternary system 4,5,[16][17][18][19][20][21][22][23][24][25] , and most of the absorption data are near the bandgap only. To the best of the authors' knowledge, there is a lack of publication on the direct calculation of the optical response functions of dilute-N GaPAsN alloys, such as their refractive indices, absorption coefficients, or dielectric functions, etc.…”

Section: Introductionmentioning

confidence: 99%

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Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si

Zou

Goodnick

2020

Journal of Applied Physics

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Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper uses the 3 5 * tight-binding model to calculate the fullband electronic structure of dilute-N GaPAsN, and then calculate the optical response functions considering direct transitions within the electric dipole approximation. Good agreement is obtained for the dielectric function in comparison to available optical data for dilute nitrides. To achieve this, the 3 5 * parameters for GaP and GaAs are optimized for their optical properties in comparison to published data, which are then used as the basis for the 3 5 * parameters for dilute-N GaPN and GaAsN. The calculated absorption between the valence band and the newly formed lowest conduction band of the dilute nitrides increases as the N fraction increases, in agreement with experiments, mainly due to the net increase in their coupling in the entire Brillouin zone, supported by the calculated momentum matrix element in the present work.

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“…The absorption coefficients of GaNAs and GaInNAs have been measured by many workers using R, T [14,44] and SE [45,46] techniques. The absorption edge is a useful measure of the direct bandgap as a function of temperature [47] and pressure [48].…”

Section: Optical Absorptionmentioning

confidence: 99%

III N V semiconductors for solar photovoltaic applications

Geisz

Friedman

2002

Semicond. Sci. Technol.

323

204

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III-N-V semiconductors are promising materials for use in next-generation multijunction solar cells because these materials can be lattice matched to substrates such as GaAs, Ge and Si, with a range of bandgaps that are complementary to those of other III-V semiconductors. Several potentially high-efficiency multijunction photovoltaic device designs using III-N-V materials are discussed. The main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III-N-V materials. The present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs lattice matched to Si is reviewed.

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Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1−xNx alloys using spectroscopic ellipsometry

Cited by 10 publications

References 12 publications

Low-Temperature Epitaxial Growth of the Quaternary Wide Band Gap Semiconductor SiCAlN

Low-Temperature Epitaxial Growth of the Quaternary Wide Band Gap Semiconductor SiCAlN

Calculation of optical response functions of dilute-N GaPAsN lattice-matched to Si

III N V semiconductors for solar photovoltaic applications

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