2019
DOI: 10.1016/j.heliyon.2019.e02022
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Optical characterization of laser-driven double Morse quantum wells

Abstract: In this study, the first-order linear, third-order nonlinear, and total absorption coefficients for the intersubband transition between the two lower-lying electronic levels in both symmetric and asymmetric double Morse quantum wells under the non-resonant high-frequency intense laser field are investigated. The study takes into account the effects of the structure parameters. The results show that the electronic and also accordingly optical properties of the structures which we focus on can be adjustable to o… Show more

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Cited by 16 publications
(2 citation statements)
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References 31 publications
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“…The disappearance of degeneracy in the energy levels depends on the respective potential parameters and the applied external fields. Since the nonlinear optical properties of semiconductor QWs mostly depend on the asymmetry of the confinement potential, when examining the optical properties of heterostructures such as quantum wells, wires, and dots, either their asymmetrical shapes are selected or an electric field is applied to symmetrical shapes [14][15][16][17][18][19][20][21][22]. Advanced high-power tuneable laser sources have motivated studies on the interaction of a high-frequency intense laser field (ILF) with carriers in semiconductors [23].…”
Section: Introductionmentioning
confidence: 99%
“…The disappearance of degeneracy in the energy levels depends on the respective potential parameters and the applied external fields. Since the nonlinear optical properties of semiconductor QWs mostly depend on the asymmetry of the confinement potential, when examining the optical properties of heterostructures such as quantum wells, wires, and dots, either their asymmetrical shapes are selected or an electric field is applied to symmetrical shapes [14][15][16][17][18][19][20][21][22]. Advanced high-power tuneable laser sources have motivated studies on the interaction of a high-frequency intense laser field (ILF) with carriers in semiconductors [23].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, these potentials mentioned above have been extensively investigated under external fields such as electric, magnetic, and intense laser fields (ILFs). The effects of the ILF on the electronic structure in a Gaussian quantum well were investigated by Sari et al [ 19 ]; Kasapoglu et al investigated the effects of non-resonant high-frequency ILF on the electronic and optical properties of both the symmetric and asymmetric double Morse quantum wells, and quantum wells/quantum dots which have Razavy potential [ 20 , 21 ]. Furthermore, some of these potentials, which are called QES, have been studied under electric and magnetic fields [ 22 , 23 , 24 , 25 , 26 , 27 ].…”
Section: Introductionmentioning
confidence: 99%