Optical characterization of InGaAsN layers grown on InP substrates

Molecular beam epitaxial growth of dilute nitride GaNAs and GaInNAs nanowires

“…Nitrogen was supplied by an electron cyclotron resonance plasma source. [31] The surfaces of the epi-ready Si substrates were not treated prior to the NW growth until their introduction into the MBE system. The substrate surface was thus covered with a thin native oxide having a typical thickness of several nanometres.…”

“…During the interruption, the growth temperature was reduced to 500 °C and the nitrogen plasma was ignited. [31] We then grew the GaAs shell for 5 min, and the GaNAs or GaInNAs shell for 30 min, by opening the shutter of the plasma source. After the growth of the GaNAs or GaInNAs layer, the plasma was immediately extinguished.…”

“…Three series of GaNAs structures were fabricated by varying the nitrogen flux, which was controlled by adjusting the microwave power of the plasma source between 0 and 40 W at a fixed N 2 gas flow rate of 1 sccm. [31] The GaNAs shell nominally contained 0%, 2%, and 3% nitrogen, which was determined using X-ray diffraction (XRD) with a fitting based on the dynamical theory of diffraction for bulk GaNAs grown on a GaAs(001) substrate. [36] Using plasma conditions identical to those of the GaNAs sample containing 2% N, and simultaneously opening the In shutter, we grew the other GaInNAs core-multishell NW sample.…”

Characterization of InGaAsSbN layers grown on InP by MBE

“…However, there have been few studies for characterization of InGaAsN and/or InGaAsSbN layers on InP [1][2][3]. We already reported the effects of growth temperature and As/III flux ratio on crystalline quality of InGaAsN layers on InP [4], and nitrogen composition dependences of photoluminescence and photo-reflectance characteristics of the InGaAsN layers on InP [5]. We also investigated that the surface morphology and the crystalline quality of the InGaAsSbN layer grown on InP were superior to those of InGaAsN layer by using atomic force microscopy and Xray diffraction measurements [6].…”

2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

“…This result is quite consistent with our previous results, where the band gap difference between the InGaAs and InGaAsN layers is 100 meV at 1% nitrogen. 9) Figure 5 shows the temperature dependence of the EL peak intensity for both type-II QW diodes. It is known that the EL intensity of the InGaAsN/GaAsSb type-II QW diode (1% nitrogen) is about two orders of magnitude lower than that of the InGaAs/GaAsSb type-II QW diode at room temperature.…”