2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

Kawamura, Y.; Sahashi, T

doi:10.7567/jjap.53.028004

Cited by 8 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Consequently, many growth techniques are used to prepare ultrathin III-V-N alloys, MQWs and superlattices (SLs) on different (Si, GaAs, InAs, InP) substrates by exploiting gas-source molecular beam epitaxy (GS-MBE), [40][41][42][43][44], hydride vapor phase epitaxy (HVPE) [45], liquid phase epitaxy (LPE), chemical beam epitaxy (CBE), atmosphericpressure metal-organic vapor-phase epitaxy (AP-MOVPE) and low-pressure MOVPE (LP-MOVPE) [46][47][48]. As the importance of these materials for designing different device structures in photonic applications is intensified, so are the obligations of many scientists and engineers to characterize them by using nondestructive experimental techniques [49][50][51][52].…”

Section: Introductionmentioning

confidence: 99%

Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

Talwar,

Yang,

Lin

2023

Crystals

View full text Add to dashboard Cite

The lattice dynamical properties of dilute InAs1−xNx/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was employed to measure the room-temperature infrared reflectivity (IRR) spectra at near-normal incidence (θi = 0). The results in the frequency range of 180–500 cm−1 revealed accurate values of the characteristic In-As-like and In-N-like vibrational modes. For InAs1−xNx alloys, a classical “Drude–Lorentz” model was constructed to obtain the dielectric functions ε~ω in the far IR regions by incorporating InAs-like and InN-like transverse optical ωTO modes. Longitudinal optical ωLO phonons were achieved from the imaginary parts of the simulated dielectric loss functions. The theoretical results of IRR spectra for InAs1−xNx/InP (001) epilayers using a multi-layer optics methodology provided a very good agreement with the experimental data. At oblique incidence (θi ≠ 0), our study of s- and p-polarized reflectance (Rs,p(ω)) and transmission (Ts,p(ω)) spectra allowed the simultaneous perception of the ωTO and ωLO phonons of the InAs, InN and InAs0.97N0.03 layers. Based on the average t-matrix Green’s function theory, the results of local vibrational modes for light SiIn+ donors and SiAs−, CAs− acceptors in InAs were found in good agreement with the existing Raman scattering and infrared spectroscopy data. InInN, however, the method predicted an in-band mode for the MgIn− acceptor while projecting an impurity mode of the SiIn+ donor to appear just above the maximum ωmaxInN[≡595 cm−1] phonon frequency region. In InAs1−xNx/InP (001) epifilms, the comparison of reflectivity/transmission spectra with experiments and the predictions of impurity modes for isoelectronic donor and acceptor impurities in InAs and InN can be valuable for appraising the role of defects in other technologically important semiconductors.

show abstract

Section: Introductionmentioning

confidence: 99%

Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

Talwar,

Yang,

Lin

2023

Crystals

View full text Add to dashboard Cite

show abstract

“…This material has a range of values of the energy gap (Eg) between 0.72 to 1.42 eV depends on the content of Sb elements. This energy gap range corresponding with wavelength range required in the optical fiber communication systems [1,2,3,4]. In growing GaAsSb epitaxial layers, there are several major challenges to obtain high-quality and high-performance epitaxially grown layers.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

Suhandi¹,

Tayubi²,

Arifin

2016

IOP Conf. Ser.: Mater. Sci. Eng.

View full text Add to dashboard Cite

Abstract. . Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

show abstract

“…Actually, 2.3–3.5 μm wavelength emission has been achieved with type‐II InP‐based light emitting diodes and laser diodes . Recently, we reported room‐temperature light emission at the wavelength of 2.86 μm for InGaAsN/GaAsSb type‐II QW diodes grown on InP substrates, where 1% nitrogen atoms were introduced into InGaAs layers to reduce the band gap . In general, annealing of the epitaxial layers and devices induces large effects on their properties.…”

Section: Introductionmentioning

confidence: 99%

Annealing effects on the properties of InGaAsN/GaAsSb type‐II quantum well diodes grown on InP substrates

Kawamura

Shishido

Tanaka

et al. 2016

Physica Status Solidi (a)

View full text Add to dashboard Cite

Annealing effects on the properties of InGaAsN/GaAsSb type‐II quantum well (QW) diodes grown on InP substrates by molecular beam epitaxy (MBE) were studied. It was found that the peak of electroluminescence (EL) shows drastic red‐shift and the reverse‐biased current of the current–voltage (I–V) characteristic of the type‐II QW diode increases by the annealing. In addition, we found that the electron effective mass of the InGaAsN layer of the type‐II InGaAsN/GaAsSb multiple quantum wells (MQWs) estimated by the temperature dependence of the amplitude of the Shubnikov‐de Haas (SdH) oscillations decreases by the annealing. The mechanism of the observed annealing effects was discussed.

show abstract

2.86 µm room-temperature light emission of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates

Cited by 8 publications

References 9 publications

Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

Annealing effects on the properties of InGaAsN/GaAsSb type‐II quantum well diodes grown on InP substrates

Contact Info

Product

Resources

About