Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters

Parchinskiy, P. B.; Yu, Fucheng; Jeong, Se Young; Gao, Cunxu; Kim, Dojin; Kim, Hyojin; Ihm, Young Eon

doi:10.1016/j.apsusc.2005.12.099

Cited by 5 publications

(2 citation statements)

References 24 publications

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“…al. 45 suggested a Ga antisite related transition. The PL peaks at 1.467 eV and 1.453 eV were observed by Wagenhuber et.…”

Section: Photoluminescencementioning

confidence: 99%

“…The origin of the luminescence centered at about 1.46 eV remains unclear. Fang et al 40 and Das et al 41 attributed this emission to some non-identied additional impurity, whereas Parchinskiy et al 45 suggested a Ga antisite related transition. The PL peaks at 1.467 eV and 1.453 eV were observed by Wagenhuber et al 30 in MBE GaAs/Si and have not been identi-ed.…”

Section: Photoluminescencementioning

confidence: 99%

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Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates

et al. 2013

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Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.e., it is much lower than the Mn/Ga flux ratio (about 3%) used during the MBE growth. The resistivity measurements of individual nanowires confirmed that they are conductive, in accordance with the photoluminescence measurements which showed the presence of Mn(2+) acceptors located at Ga sites of the GaAs host lattice of the nanowires. An anomalous temperature dependence of the photoluminescence related to excitons was demonstrated for Mn-doped GaAs nanowires.

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“…al. 45 suggested a Ga antisite related transition. The PL peaks at 1.467 eV and 1.453 eV were observed by Wagenhuber et.…”

Section: Photoluminescencementioning

confidence: 99%