Optical characteristics of (La, Ce)B6 films deposited on silicon substrates by e-beam evaporation process

Kafadaryan, E. A.; Petrosyan, S. I.; Badalyan, G. R.; Harutyunyan, Syuzanna R.; Kuzanyan, A. S.

doi:10.1016/s0040-6090(02)00716-2

Cited by 19 publications

(10 citation statements)

References 12 publications

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“…Herein, we have shown a direct relationship between high crystallinity and better optical properties of LaB 6 , rather than doping. [ 27,28 ] In particular, we have demonstrated the evolution of the surface morphology and crystallite size with the substrate temperature and its clear effect on the optical properties of LaB 6 . We have shown that LaB 6 can be plasmonic, starting from a substrate temperature as low as 400 °C.…”

Section: Resultsmentioning

confidence: 92%

Optical Properties and Optimization of LaB₆ Thin Films for Photothermal Applications

Sugavaneshwar

Handegård

Doan

et al. 2022

Advanced Optical Materials

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The growth of highly crystalline LaB6 films with an excellent optical response and low loss is reported, which will be useful for high‐performance photothermal device applications when combined with their inherent refractory properties. Optimum growth parameters for realizing uniaxial and coherent LaB6 thin films, exhibiting an excellent plasmonic response for near‐ to mid‐infrared device applications, are established. Numerical electromagnetic simulations of the epitaxial LaB6 nanostructures revealed that the electromagnetic field at the LaB6 surface can be as high as that of the Au nanostructures. Furthermore, the LaB6 nanostructures show resonance in the visible (red) to mid‐infrared region comparable to those of Au with the added advantage of improved temperature stability that can withstand harsh photothermal device operations.

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Section: Resultsmentioning

confidence: 92%

Optical Properties and Optimization of LaB₆ Thin Films for Photothermal Applications

Sugavaneshwar

Handegård

Doan

et al. 2022

Advanced Optical Materials

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“…The (100)-* kafad@ipr.sci.am phone 374 10 288150; fax 374 232 31172 oriented LaB 6 films with thickness of 1000 nm were deposited on (0001) Al 2 O 3 substrates by e-beam evaporation in vacuum at substrate temperature 800 °C. The number of carriers and dc resistance of LaB 6 films were ~10 22 cm -3 and ~ 98 μΩcm, respectively [9]. The thickness of the PZT films was 180 nm and 340 nm.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Electrical properties of LaB 6 /PZT/Ag structure with asymmetric interface charge distribution

et al. 2010

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Effect of the bottom electrode (LaB 6 ) on electron emission characteristics (current density, excited voltage), leakage current behavior and polarization-voltage hysteresis of the Ag/PbZr 0.52 Ti 0.48 O 3 /LaB 6 /Al 2 O 3 capacitor has been firstly experimentally investigated by fabricating PbZr 0.52 Ti 0.48 O 3 (PZT) and LaB 6 films with sol-gel and e-beam evaporation techniques respectively. The current-voltage (I-V) and hysteresis (P-E) characteristics show different charge distribution at the top and bottom interfaces. Leakage current behavior as a function of voltage is interpreted by Schottky charge transport mechanism. Electron emission from the PZT surface under low driving pulses <0.4 V has been detected in vacuum chamber with pressure 4x10 -5 Torr. Current densities in the range of 0-105 μA/cm 2 have been measured in a diode configuration under 10-22 kV/cm excitation voltages and compared with data reported in the literature.

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“…There were some studies on LaB 6 film [4][5][6][7][8] . S. Schelm and G. B. Smith showed a comprehensive evaluation of the performance of NIR blocking windows, using LaB 6 nano particle doped polymer sheets.…”

Section: Introductionmentioning

confidence: 99%

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB₆ FILM'S CHARACTERISTICS

Min

Zhao

et al. 2009

Int. J. Mod. Phys. B

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The deposition of lanthanum boride ( LaB6)thin films by the d.c. magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal face. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of (100) face changed from 1256(on 0V) to 580(on -150V), but the intensity of (110) face changed from 614(on 0V) to 486(on -150V). The rel. int(100%) of (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decreased was not obviously. The maximum and minimum of the deposition ratio were 17.53nm and 13.75nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50nm. The maximal roughness of the films decreased firstly and increased afterward, and it got the maximum on the -50V bias-voltage.

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Optical characteristics of (La, Ce)B6 films deposited on silicon substrates by e-beam evaporation process

Cited by 19 publications

References 12 publications

Optical Properties and Optimization of LaB₆ Thin Films for Photothermal Applications

Optical Properties and Optimization of LaB₆ Thin Films for Photothermal Applications

Electrical properties of LaB 6 /PZT/Ag structure with asymmetric interface charge distribution

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB₆ FILM'S CHARACTERISTICS

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Optical characteristics of (La, Ce)B6 films deposited on silicon substrates by e-beam evaporation process

Cited by 19 publications

References 12 publications

Optical Properties and Optimization of LaB6 Thin Films for Photothermal Applications

Optical Properties and Optimization of LaB6 Thin Films for Photothermal Applications

Electrical properties of LaB 6 /PZT/Ag structure with asymmetric interface charge distribution

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

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Optical Properties and Optimization of LaB₆ Thin Films for Photothermal Applications

Optical Properties and Optimization of LaB₆ Thin Films for Photothermal Applications

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB₆ FILM'S CHARACTERISTICS