Electrical properties of LaB 6 /PZT/Ag structure with asymmetric interface charge distribution

Abstract

Effect of the bottom electrode (LaB 6 ) on electron emission characteristics (current density, excited voltage), leakage current behavior and polarization-voltage hysteresis of the Ag/PbZr 0.52 Ti 0.48 O 3 /LaB 6 /Al 2 O 3 capacitor has been firstly experimentally investigated by fabricating PbZr 0.52 Ti 0.48 O 3 (PZT) and LaB 6 films with sol-gel and e-beam evaporation techniques respectively. The current-voltage (I-V) and hysteresis (P-E) characteristics show different charge distribution at the top and bottom interfaces. Leakage current behavior as a function of voltage is interpreted by Schottky charge transport mechanism. Electron emission from the PZT surface under low driving pulses <0.4 V has been detected in vacuum chamber with pressure 4x10 -5 Torr. Current densities in the range of 0-105 μA/cm 2 have been measured in a diode configuration under 10-22 kV/cm excitation voltages and compared with data reported in the literature.