Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components

Li, Haolin; Tang, Jilong; Pang, Guotao; Wang, Dengkui; Fang, Xuan; Chen, Rui; Wei, Zhipeng

doi:10.1039/c9ra08451g

Cited by 8 publications

(4 citation statements)

References 23 publications

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“…Nanowires (NWs) with a quasi-one-dimensional structure and large surface-volume ratio have become a good choice for the preparation of various optoelectronic devices, such as solar cells [1,2], lasers [3][4][5][6] and photodetectors [7][8][9][10]. Among them, NW photodetectors have been the focus of research during the past decade [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

Zhu¹,

Lin²,

Chen³

et al. 2020

Nanotechnology

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In semiconductor nanowire (NW) photodetectors, the Schottky barrier formed by the contact between metal and semiconductor can act as a depletion layer. For NW structures with a smaller diameter, the depletion region is especially important to the carrier transport. We prepared a GaAs/AlGaAs quantum well NW photodetector with a two-dimensional electron-hole tube, in which the two-dimensional hole tube (2DHT) formed by the inner layer of GaAs and AlGaAs has the most important role in the regulation of carriers. By adjusting the bias voltage to vary the depth of the depletion region, we have confirmed the influence of the depletion region in a 2DHT. A significant inflection point was found in the responsivity-voltage curve at 1.5 V. By combining the depletion region and 2DHT, the responsivity of the fabricated device was increased by 18 times to 0.199 A W−1 and the detectivity is increased by 5 times to 5.8 × 1010 Jones, compared to the pure GaAs NW photodetector. Reasonable combination of depletion layer and 2DHT was proved to promote high-performance NW photodetector.

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Section: Introductionmentioning

confidence: 99%

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

Zhu¹,

Lin²,

Chen³

et al. 2020

Nanotechnology

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“…2f shows the PL emission. It is found that with Sb molar fractions increasing from 8 to 12%, the PL emission changes from 1.35 to 1.31 eV (~918 to 947 nm) at 10 K, while the temperature stability improves [76]. The deeper QW is created for higher Sb compositions, which provides more effective confinement for carriers in the quasi-type-II band structure.…”

Section: Qw Structure In Gaas-based Nwsmentioning

confidence: 98%

“…Due to the 1D structure of NWs, QW in NWs can be constructed in two ways, namely, the coreshell structure that forms a QW in the radial direction ( Fig. 1e) [65][66][67][68][69][70][71][72][73][74][75][76][77][78][79], and the dot-in-rod structure that forms a QW in the axial direction ( Fig. 1f) [80][81][82][83][84][85][86][87][88].…”

Section: Gaas-based Qw Nw Growthmentioning

confidence: 99%

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Optical property and lasing of GaAs-based nanowires

Chen

Wei

et al. 2020

Sci. China Mater.

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GaAs-based nanowire (NW) lasers working in the infrared region is critical in integrated optoelectronics. In the past few decades, the field of NW lasers has developed rapidly. Compared with materials working in the ultraviolet and visible ranges, GaAs-based infrared NW lasers, however, are more difficult to achieve because of their specific properties. In this review, we focus on the recent developments of GaAs-based NWs, more especially, the optical property and lasing of GaAs-based NWs. The growth mechanism of GaAs NWs is introduced in detail, including the crystal phase control and the growth of complex structures. Subsequently, the influence and improvement of the optical properties of GaAsbased NWs are introduced and discussed. Finally, the design and latest progress of GaAs-based NW lasers are put forward.

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Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

2023

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Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components

Abstract: GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.

Cited by 8 publications

References 23 publications

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

Influence of the depletion region in GaAs/AlGaAs quantum well nanowire photodetector

Optical property and lasing of GaAs-based nanowires

Linear and nonlinear optical absorption coefficients and refractive index changes of GaAs/GaAsSb/GaAs V-shaped quantum wells affected by intense laser fields

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