Optical property and lasing of GaAs-based nanowires

Li, Haolin; Chen, Yuting; Wei, Zhipeng; Chen, Rui

doi:10.1007/s40843-020-1288-6

Cited by 14 publications

(6 citation statements)

References 134 publications

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“…2 Crucially, both ensemble and single-element characterisation are highly challenging for nanomaterials, creating a bottleneck for their exploitation; the former as it cannot measure inhomogeneity and the latter because measurement of a local region may not represent the whole sample size. 3 GaAs nanowires (NWs) have been widely studied for optoelectronic applications; [4][5][6][7][8] they can be produced with high crystal quality 9,10 and provide a facile route to heterostructure design based on decades of experience in planar material growth. 11 However, a large surface-to-volume ratio and a relatively high surface recombination velocity of 5.4 × 10 5 cm/s (for 50 nm-thick GaAs NW 12 ) give rise to low quantum efficiency of the emission.…”

Section: Introductionmentioning

confidence: 99%

Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework

Al-Abri¹,

Al-Amairi²,

Byrne³

et al. 2023

Preprint

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Bottom-up production of semiconductor nanomaterials is often accompanied by inhomogeneity resulting in a spread in electronic properties which may be influenced by the nanoparticle geometry, crystal quality, stoichiometry or doping. Using photoluminescence spectroscopy of a population of more than 20,000 individual Zn-doped GaAs nanowires, we reveal inhomogeneity in, and correlation between doping and nanowire diameter by use of a Bayesian statistical approach. Recombination of hot-carriers is shown to be responsible for the photoluminescence lineshape; by exploiting lifetime variation across the population, we reveal hot-carrier dynamics at the sub-picosecond timescale showing interband electronic dynamics. High-throughput spectroscopy together with a Bayesian approach are shown to pro-1

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Section: Introductionmentioning

confidence: 99%

Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework

Al-Abri¹,

Al-Amairi²,

Byrne³

et al. 2023

Preprint

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“…Nanomaterials exhibit superior electrical and optical properties at lowdimensional levels, and are utilized for electronic and photonic devices, including nanowire transistors, [1] nanolasers, [2,3] photodetectors, [4] light-emitting diodes, [5] solar cells, [6] and single-electron memory devices. [7] Vertically aligned NW arrays are widely used in optoelectronic devices, such as solar cells, [8,9] photodetectors, [10] light emitters [11] and for biological/chemical sensing [12,13] due to their high efficiency and potential sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy*

Kang¹,

Lin²,

Li³

et al. 2021

Chinese Phys. B

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The self-catalyzed growth of GaAs nanowires (NWs) on silicon (Si) is an effective way to achieve integration between group III–V elements and Si. High-crystallinity uniform GaAs NW arrays were grown by solid-source molecular beam epitaxy (MBE). In this paper, we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials. The influence of natural oxidation time on the crystallinity and uniformity of GaAs NW arrays was investigated and is discussed in detail. The GaAs NW crystallinity and uniformity are maximized after 20 days of natural oxidation time. This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates. The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.

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“…[ 11 ] Nanolasers based on nanowire have promising photoelectric properties due to the quantum confinement effect. [ 12 ] Traditional semiconductor nanowires and nanobelts behave like a Fabry–Perot cavity. [ 13 ] The wide spectrum wavelength‐tunable nanolasers based on nanowires provide an ideal module for optical communication.…”

Section: Introductionmentioning

confidence: 99%

Nanolasers Based on 2D Materials

Sun

et al. 2020

Laser & Photonics Reviews

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Nanolasers, with small footprint and ultralow threshold, are promising for applications in data communication, on-chip optical computing, and optical interconnects. In addition to the microcavity design, the choice of gain material is another critical factor determining the optical performance of nanolasers. 2D materials are widely studied and applied in nanoscale optoelectronic devices due to their exceptional electrical, chemical, thermal, and optical properties caused by the unique layered structures. As emerging materials with unique optical properties, 2D materials are selected as effective gain materials for designing of nanolasers. In this review, the recent advances in nanolasers based on 2D materials are comprehensively addressed.

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Optical property and lasing of GaAs-based nanowires

Cited by 14 publications

References 134 publications

Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework

Sub-Picosecond Carrier Dynamics Explored using Automated High-Throughput Studies of Doping Inhomogeneity within a Bayesian Framework

Growth of high-crystallinity uniform GaAs nanowire arrays by molecular beam epitaxy*

Nanolasers Based on 2D Materials

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