2002
DOI: 10.1016/s0925-8388(02)00344-4
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Optical characteristics of Er3+–Yb3+ doped SnO2 xerogels

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Cited by 56 publications
(43 citation statements)
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“…2(c). In a previous paper [12], it was verified that codoping with Yb 3+ is efficient only for Er 3+ ions located at 2 figure 1. Besides, generation of ctron-hole pairs from the SnO 2 matrix was provided th excitation with 328nm.…”
Section: Methodsmentioning
confidence: 87%
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“…2(c). In a previous paper [12], it was verified that codoping with Yb 3+ is efficient only for Er 3+ ions located at 2 figure 1. Besides, generation of ctron-hole pairs from the SnO 2 matrix was provided th excitation with 328nm.…”
Section: Methodsmentioning
confidence: 87%
“…2(a). It is well known that emission from substitutional sites is easily observed via bandto-band excitation of SnO 2 [12]. Then, the large band observed by PLE is a strong indication that Er 3+ enters into the lattice, in substitution to Sn atoms.…”
Section: Methodsmentioning
confidence: 93%
See 1 more Smart Citation
“…Some Stark peaks present an inhomogeneous splitting due to electric field variation in different sites occupied by the Er 3þ ion in the SnO 2 nanocrystal. 36,37 When the Er 3þ neighborhood changes, the electric field also changes due to the random neighbor distribution, characteristic of materials with nanoscopic crystallites, generating small variations in the positions of the Stark levels. Figure 10 presents some details concerning the PL spectra acquired at 9 K, related to Er 3þ transitions of Table III. The effect of the different pH of the starting solution on the Stark levels can be verified through the broadening of the peak width.…”
Section: Resultsmentioning
confidence: 99%
“…Then, the result shown in Figure 5 for the pH 4 film suggests that the limiting pH value for improving electrical properties depends also on the doping nature. The Er 3+ doping is located mainly at particles surface due to the low solubility 34 . Then, during the formation of cross-linked bond Sn-O-Sn, the Er 3+ may influence the process, leading to shorter potential barriers.…”
Section: Low Temperature Electrical Characterization Of Thin Filmsmentioning
confidence: 99%