2011
DOI: 10.1590/s1516-14392011005000010
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Influence of pH of colloidal suspension on the electrical conductivity of SnO2 thin films deposited via Sol-Gel-Dip-Coating

Abstract: Tin dioxide (SnO 2 ) thin films are deposited by the dip-coating technique from colloidal suspensions prepared with distinct pH through the sol-gel method. The decrease of the pH contributes to the destruction of an electrical layer adjacent to particles in solution, leading to a high degree of aggregation among these particles due to the generation of cross-linked bonds (Sn-O-Sn) between them. The aggregation affects the electrical properties of films, because the pH variation produces particle with distinct … Show more

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Cited by 13 publications
(7 citation statements)
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“…It can be shown that for nanocrystalline materials, the mobility is dominated by grain boundary scattering, so the contributions due to scattering by ionized phonons and impurities can be neglected. The mobility due to grain boundary scattering has the general form [165,166,172,176]:…”
Section: Tdppc In Polycrystalline Oxide Semiconductorsmentioning
confidence: 99%
“…It can be shown that for nanocrystalline materials, the mobility is dominated by grain boundary scattering, so the contributions due to scattering by ionized phonons and impurities can be neglected. The mobility due to grain boundary scattering has the general form [165,166,172,176]:…”
Section: Tdppc In Polycrystalline Oxide Semiconductorsmentioning
confidence: 99%
“…For a typical semiconductor, the most relevant scattering phenomena are phonon scattering for higher temperatures and ionized impurity scattering for lower temperature [47]. It is expected that the semiconductor resistivity decreases when the temperature rises, as takes place for our sample above 50 K. However, in the case of nanocrystalline building blocks, where the grain boundary scattering becomes much more relevant than the phonon scattering or the ionized impurity scattering, the grain boundary mobility increases with temperature decrease [19,48], independent on considering the evaluated crystallite size or the metallurgical grain as the scattering unit. The grain boundary scattering is the dominant mechanism and the depletion layer may become as large as half of the crystallite [14].…”
Section: Electrical Characteristics In the Darkmentioning
confidence: 81%
“…After metal deposition, the samples were annealed at 150°C for 30 min. The indium electrodes has been chosen due to the previous best results obtained for oxide semiconductor films [33], concerning its ohmic behavior and low contact resistance. Sample cooling for electrical measurements was performed in a He closed-cycle cryostat from APD cryogenics, coupled with a Lake Shore Cryotronics temperature controller with (0.05°C precision).…”
Section: Electrical Characterization Measurementsmentioning
confidence: 99%