Optical Beam Induced Current Investigations of Particle Detectors

Castaldini, A.; Cavallini, A.; Polenta, L.

doi:10.1002/1521-3951(200011)222:1<245::aid-pssb245>3.0.co;2-y

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Cited by 3 publications

(1 citation statement)

References 17 publications

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“…The method enable the comprehensive analysis of photocurrent generated at the microregion of semiconductor material or device by focused light beam [13,14].…”

Section: Resultsmentioning

confidence: 99%

Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon

Domaradzki

2006

Journal of Non-Crystalline Solids

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“…The method enable the comprehensive analysis of photocurrent generated at the microregion of semiconductor material or device by focused light beam [13,14].…”

Section: Resultsmentioning

confidence: 99%

Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon

Domaradzki

2006

Journal of Non-Crystalline Solids

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Electrical and optical properties of TOS–S heterojunction devices

Domaradzki

Kaczmarek

2008

Thin Solid Films

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Double-junction effect in proton-irradiated silicon diodes

Castaldini

Cavallini

Polenta

et al. 2002

Journal of Applied Physics

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This article concerns the existence of a double-junction effect in proton-irradiated silicon p+-ν-n+ (pin) diodes demonstrated by surface potential and optical-beam-induced current (OBIC) investigations. By increasing the diode biasing, the junctions existing at both ends in the irradiated devices move towards each other up to join, hence, causing a full depletion of the diodes. Due to the inhomogeneity of the electric field, however, the charge-carrier collection is strongly dependent on the position. The extent of the diode depletion layers at both ends and the shape of the electric field within the p+-ν-n+ diodes are determined as a function of the bias applied. Three-dimensional photocurrent maps obtained by OBIC profiles allow for imaging the double junction. The deep level analysis evidences the presence of irradiation-induced defects, which are responsible for the double-junction effect.

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Optical Beam Induced Current Investigations of Particle Detectors

Cited by 3 publications

References 17 publications

Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon

Photoelectrical properties of heterojunction devices based on transparent oxide semiconductors on silicon

Electrical and optical properties of TOS–S heterojunction devices

Double-junction effect in proton-irradiated silicon diodes

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