Optical bandgap energy of wurtzite InN

Matsuoka, Takashi; Okamoto, Hiroshi; Nakao, Masashi; Harima, Hiroshi; Kurimoto, Eiji

doi:10.1063/1.1499753

Cited by 726 publications

(413 citation statements)

References 9 publications

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“…(zinc blende) or 0.71 eV (wurtzite) in extremely good agreement with measured values [53,57,[68][69][70][71]. In general, the improvement results from the good performance of the HSE03 starting point for materials that comprise d-electrons such as GaAs, CdS, GaN, ZnO, and ZnS, for which the mean absolute relative error of the HSE03 + 0 0 G W gaps is calculated to be 7.9%, while it is about 12.2% in the GGA + 0 0 G W approach.…”

Section: Quasiparticle Shiftssupporting

confidence: 72%

Ab‐initio theory of semiconductor band structures: New developments and progress

Bechstedt

Fuchs

Kresse

2009

Physica Status Solidi (b)

124

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Organic fluorescent molecules are infiltrated in the channels of zeolite L nanocrystals, thus creating organic–inorganic fluorescent nanoparticles. Combined with dielectric matrices, these fluorescent nanopigments open the way to the realization of novel optical devices. In this paper, the optical measurement of the quantum yield of fluorescent zeolites by means of a precise and reliable diffuse reflectance technique is presented. Several possible factors that may affect the fluorescence quantum yield are also investigated.

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Section: Quasiparticle Shiftssupporting

confidence: 72%

Ab‐initio theory of semiconductor band structures: New developments and progress

Bechstedt

Fuchs

Kresse

2009

Physica Status Solidi (b)

124

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“…Pure indium nitride is the least known of the III-N materials. Until recently, the commonly quoted value for the optical band gap energy of InN was 1.89 eV, but new measurements of high quality InN films have shown evidence of a much smaller band gap between 0.65 and 0.90 eV [1]. This smaller band gap is compatible with the main wavelength range of optical communication.…”

Section: Introductionmentioning

confidence: 53%

Growth of InN by vertical flow MOVPE

Suihkonen

Sormunen

Rangel-Kuoppa

et al. 2006

Journal of Crystal Growth

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InN films were grown by metal-organic vapour phase epitaxy (MOVPE). The growth was performed in a MOVPE apparatus with a vertical reactor geometry optimized for the growth of GaN. The reactor geometry is found to cause enhanced cracking of NH 3 , and the growth rate is limited by the amount of reactive indium in the temperature range of 550-650 1C. The grown films are characterized comprehensively. Experimental results indicate that the InN films, grown on sapphire substrates, contain metallic indium and the film surface consist of hexagonal islands. Growth temperature has a strong effect on the surface island size, optical quality and electrical properties of the InN layer. The desorption of nitrogen is assumed to cause the formation of metallic indium above 550 1C. r

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“…InN, after being discovered of a narrow bandgap (E g ∼ 0.65 − 1 eV) [1][2][3][4][5][6][7][8][9][10][11][12][13][14] and predicted to possess the largest electron mobility among group-III nitrides (∼ 4400 cm 2 ·V −1 ·s −1 at 300 K), 15 has emerged as a highly promising material for infrared photodetectors and lasers, solar cells, ultrahigh-speed transistors, and sensors. [16][17][18] To date, however, the practical device applications of InN-based materials have been severely limited by the presence of extremely large residual electron density and the uncontrolled surface charge properties, as well as the difficulty in achieving p-type conductivity.…”

mentioning

confidence: 99%

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Zhao

Kibria

et al. 2012

Phys. Rev. B

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In the present work, photoluminescence characteristics of intrinsic and Si-doped InN nanowires were studied in details. For intrinsic InN nanowires, the emission is due to band-to-band carrier recombination with the peak energy at ∼ 0.64 eV (at 300 K), and may involve free-exciton emission at low temperatures. The PL spectra exhibit a strong dependence on optical excitation power and temperature, which can be well characterized by the presence of very low residual electron density, and the absence or negligible level of surface electron accumulation. In comparison, the emission of Si-doped InN nanowires is characterized by the presence of two distinct peaks located at ∼ 0.65 eV and ∼ 0.73 − 0.75 eV (at 300 K). Detailed studies further suggest that these low-energy and highenergy peaks can be ascribed to band-to-band carrier recombination in the relatively low-doped nanowire bulk region and Mahan exciton emission in the high-doped nanowire near-surface region, respectively; this is a natural consequence of dopants surface segregation. The resulting surface electron accumulation and Fermi-level pinning, due to the enhanced surface doping, is confirmed by angle-resolved X-ray photoelectron spectroscopy measurements on Si-doped InN nanowires, which is in direct contrast to the absence, or negligible level of surface electron accumulation in intrinsic InN nanowires. This work has elucidated the role of charge carrier concentration and distribution on the optical properties of InN nanowires.

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Optical bandgap energy of wurtzite InN

Cited by 726 publications

References 9 publications

Ab‐initio theory of semiconductor band structures: New developments and progress

Ab‐initio theory of semiconductor band structures: New developments and progress

Growth of InN by vertical flow MOVPE

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

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