Optical band gap and magnetic properties of unstrained EuTiO3 films

Abstract

Phase-pure, stoichiometric, unstrained, epitaxial ͑001͒-oriented EuTiO 3 thin films have been grown on ͑001͒ SrTiO 3 substrates by reactive molecular-beam epitaxy. Magnetization measurements show antiferromagnetic behavior with T N = 5.5 K, similar to bulk EuTiO 3. Spectroscopic ellipsometry measurements reveal that EuTiO 3 films have a direct optical band gap of 0.93Ϯ 0.07 eV.

Revisiting the fascinating properties of EuTiO 3 and its mixed crystals with SrTiO 3 : Possible candidates for novel functionalities

“…It should be mentioned here that the corresponding empty d states of the transition metals in EuZrO 3 and EuHfO 3 lie much higher in energy and as a consequence these oxides have significantly larger band gaps and are yellow and white, respectively [25]. The theoretically derived band gap is in rough agreement with conductivity measurements on thin films [26], our own conductivity data on bulk ceramic samples [27] as well as experimental results obtained by diffuse optical scattering, electron energy loss spectroscopy, and valence-band x-ray photoelectron spectroscopy [28].…”

Magnetodielectric effect and phonon properties of compressively strained EuTiO3thin films deposited on (001)(LaAlO3)0.29Kamba1, Goian2, Орлита3 et al. 2012Phys. Rev. BSelf Cite220181View full textAdd to dashboardCite

“…Details of the deposition were described elsewhere. 16 The 42 nm film was slightly relaxed, but the 22 nm film was fully (-0.9%) compressively strained, its XRD showing the same in-plane lattice parameter (3.870Å) as the substrate. The substrates of 10x10x1 mm size were provided by R. Uecker and his colleagues from the Institute of Crystal Growth, Berlin, Germany.…”

Growth and properties of GdTiO3 films prepared by hybrid molecular beam epitaxy

“…MBE has the potential to yield films with much lower defect densities than PLD, as it is a low-energetic deposition technique [25,26]. Prior MBE growth studies of RTiO 3 include ferroelectric LaTiO 3 þ x [27] and multiferroic EuTiO 3 [28], in which Ti is the þ4 valence state (EuTiO 3 is a band insulator). In this paper, we report on the growth of GdTiO 3 thin films using MBE.…”