Optical Anisotropy of Silicon Single Crystals

Pastrňák, J.; Vedam, K.

doi:10.1103/physrevb.3.2567

Cited by 90 publications

(18 citation statements)

References 6 publications

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“…There has been ample experimental evidence produced in these recent years [15] that the electric quadrupole (E2.E2) contribution could become quite significant in X-ray Absorption Spectroscopy (XAS). Typically, the electric quadrupole polarizability tensor may give rise to an optical anisotropy in cubic crystals which was observed in the visible [16,17] as well as in the X-ray range [18,19]. It may be worth emphasizing here that the electric dipole-electric octupole interference term mixes multipole moments of the same parity and hence cannot contribute to OA.…”

Section: X-ray Detected Optical Activity In the Gyration Tensor Formamentioning

confidence: 99%

X-ray detected optical activity

Рогалев

Goulon

Wilhelm

2008

Comptes Rendus. Physique

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Section: X-ray Detected Optical Activity In the Gyration Tensor Formamentioning

confidence: 99%

X-ray detected optical activity

Рогалев

Goulon

Wilhelm

2008

Comptes Rendus. Physique

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“…In the early 1980s, attempts were made to study residual stresses in mc-Si using point-by-point infrared birefringence mapping, but these were abandoned due to large grain-to-grain variations in signal intensity, 40 believed to be caused by anisotropic polarized reflections or intrinsic anisotropic birefringence. 41,42 In the mid-2000s, new attempts were made to use IR birefringence mapping 43,44 and imaging 45,46 to measure bulk residual stresses in mc-Si wafers, building on earlier successes with single-crystalline wafers. 47,48 It was proposed that the large grain-to-grain variations in birefringence intensities observed previously may be due to the presence of a variety of microdefects suspected or confirmed to exhibit a birefringence signal, including dislocations 44,49 and GBs.…”

Section: History Of Birefringencementioning

confidence: 99%

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

Ganapati

Schoenfelder

Castellanos

et al. 2010

Journal of Applied Physics

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This manuscript concerns the application of infrared birefringence imaging ͑IBI͒ to quantify macroscopic and microscopic internal stresses in multicrystalline silicon ͑mc-Si͒ solar cell materials. We review progress to date, and advance four closely related topics. ͑1͒ We present a method to decouple macroscopic thermally-induced residual stresses and microscopic bulk defect related stresses. In contrast to previous reports, thermally-induced residual stresses in wafer-sized samples are generally found to be less than 5 MPa, while defect-related stresses can be several times larger. ͑2͒ We describe the unique IR birefringence signatures, including stress magnitudes and directions, of common microdefects in mc-Si solar cell materials including: ␤-SiC and ␤-Si 3 N 4 microdefects, twin bands, nontwin grain boundaries, and dislocation bands. In certain defects, local stresses up to 40 MPa can be present. ͑3͒ We relate observed stresses to other topics of interest in solar cell manufacturing, including transition metal precipitation, wafer mechanical strength, and minority carrier lifetime. ͑4͒ We discuss the potential of IBI as a quality-control technique in industrial solar cell manufacturing.

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“…A further possible source of asymmetry is stress in the Si film. While Si is a cubic crystal, and should therefore be optically isotropic, small birefringence (△n∼10 −6 ) has been reported [22]. Significant birefringence can be induced by stress, and is a known problem for SOI rib waveguides [23].…”

Section: Coupling Between Even and Odd Modesmentioning

confidence: 99%

Mapping the optical properties of slab-type two-dimensional photonic crystal waveguides

Dulkeith¹,

McNab²,

Vlasov³

2005

Phys. Rev. B

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We report on systematic experimental mapping of the transmission properties of two-dimensional silicon-on-insulator photonic crystal waveguides for a broad range of hole radii, slab thicknesses and waveguide lengths for both TE and TM polarizations. Detailed analysis of numerous spectral features allows a direct comparison of experimental data with 3D plane wave and finite-difference time-domain calculations. We find, counter-intuitively, that the bandwidth for low-loss propagation completely vanishes for structural parameters where the photonic band gap is maximized. Our results demonstrate that, in order to maximize the bandwidth of low-loss waveguiding, the hole radius must be significantly reduced. While the photonic band gap considerably narrows, the bandwidth of low-loss propagation in PhC waveguides is increased up to 125nm with losses as low as 8±2dB/cm.

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Optical Anisotropy of Silicon Single Crystals

Cited by 90 publications

References 6 publications

X-ray detected optical activity

X-ray detected optical activity

Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

Mapping the optical properties of slab-type two-dimensional photonic crystal waveguides

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